The contacts between two-dimensional materials and metal electrodesOA
The advent of two-dimensional(2D)materials has ushered in a new era for electronic and optoelectronic devices.However,their atomic-scale thickness presents a fundamental contact interface challenge:the formation of a Schottky barrier at the 2D material–metal contact interface,which often leads to Schottky barrier and high contact resistance(RC).While detrimental for conventional transistor scaling,this inherent Schottky barrier is also a critical functional element,actively harnessed in devices like photodetectors.This duality defines the central theme of contact interface engineering in 2D electronics.This review comprehensively examines recent advances in understanding and engineering these critical interfaces.We first elucidate the core physical principles governing contact formation,including Fermi level(EF)pinning(FLP),charge transfer,and Schottky barrier modulation.We then distinguish strategic pathways for engineering contacts:routes toward ultralow-resistance Ohmic contacts(van der Waals(vdW)integration,interfacial doping,and edge contacts)and methods for tailoring Schottky contacts through barrier-height tuning.Insights from advanced characterization techniques and theoretical models for extracting Schottky barrier height(SBH)and R_(C) are also integrated.Finally,we outline unresolved challenges and future directions,providing a roadmap toward rationally designed 2D contact interfaces for unlocking full device potential.
Yingpeng Gao;Yuhua Ma;Chao Chang;Lele Li;Jing Liang;Xu Zhou;Xiaozhi Xu
Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter,Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials,School of Physics,South China Normal University,Guangzhou 510006,China Guangdong-Hong Kong Joint Laboratory of Quantum Matter,Frontier Research Institute for Physics,South China Normal University,Guangzhou 510006,ChinaGuangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter,Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials,School of Physics,South China Normal University,Guangzhou 510006,China Guangdong-Hong Kong Joint Laboratory of Quantum Matter,Frontier Research Institute for Physics,South China Normal University,Guangzhou 510006,ChinaGuangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter,Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials,School of Physics,South China Normal University,Guangzhou 510006,China Guangdong-Hong Kong Joint Laboratory of Quantum Matter,Frontier Research Institute for Physics,South China Normal University,Guangzhou 510006,ChinaGuangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter,Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials,School of Physics,South China Normal University,Guangzhou 510006,China Guangdong-Hong Kong Joint Laboratory of Quantum Matter,Frontier Research Institute for Physics,South China Normal University,Guangzhou 510006,ChinaInternational Quantum Academy,Shenzhen 518048,ChinaGuangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter,Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials,School of Physics,South China Normal University,Guangzhou 510006,China Guangdong-Hong Kong Joint Laboratory of Quantum Matter,Frontier Research Institute for Physics,South China Normal University,Guangzhou 510006,China International Quantum Academy,Shenzhen 518048,ChinaGuangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter,Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials,School of Physics,South China Normal University,Guangzhou 510006,China Guangdong-Hong Kong Joint Laboratory of Quantum Matter,Frontier Research Institute for Physics,South China Normal University,Guangzhou 510006,China
通用工业技术
two-dimensional materialsmetal electrodesOhmic contactsSchottky contactsFermi-level pinning
《Nano Research》 2026 (6)
P.690-711,22
supported by the National Natural Science Foundation of China(Nos.92577101,52102044,52372046,and 12322406)the National Key Research and Development Program of China(No.2022YFA1403503)the Guangzhou Science and Technology Program(No.2025A04J5461)the Guangdong Provincial Basic and Applied Basic Research Fund(No.2023A1515012743).
评论