Fabrication of high-responsivity FET photodetector with Ti_(3)C_(2)Cl_(2) MXene irradiated with 100 keV N ionsOA
MXene has attracted intense attention in optoelectronic photodetectors due to its outstanding electrical conductivity and tunable electronic properties.By using the Ti₃C₂Cl₂MXene irradiated with 100 keV N ions,a high-performance field-effect transistor(FET)photodetector was achieved and exhibited broadband photoresponse across the ultraviolet–visible–near infrared ray(UV–Vis–NIR)range.The responsivities of these FET photodetectors were as high as 5.3×10⁴,8.5×10⁵,3.3×10⁴,and 2.8×10⁵A/W under 360,550,750,and 1060 nm light illumination,respectively,which are approximately two orders of magnitude higher than the other MXene-based photodetectors.The remarkable performance of the Ti₃C₂Cl₂FET photodetector is attributed to synergistic effect of band gap and photoconductive gain.Besides,the ion fluence has significant influence on the photoresponse of the Ti₃C₂Cl₂FET photodetector,and there exists an optimized ion fluence to obtain the highest responsivity.These findings highlight a controllable strategy for introducing band gap in MXenes and pave the way for their application in next-generation optoelectronic devices.
Zirong Liu;Shengyuan Peng;Qingyu Zhang;Mian Li;Yukun Xiao;Yuan Gao;Fangfang Ge;Xinwei Wang;Qing Huang;Jianming Xue
State Key Laboratory of Nuclear Physics and Technology,School of Physics,Peking University,Beijing 100871,ChinaState Key Laboratory of Nuclear Physics and Technology,School of Physics,Peking University,Beijing 100871,ChinaZhejiang Key Laboratory of Data-Driven High-Safety Energy Materials and Applications,Ningbo Key Laboratory of Special Energy Materials and Chemistry,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,ChinaZhejiang Key Laboratory of Data-Driven High-Safety Energy Materials and Applications,Ningbo Key Laboratory of Special Energy Materials and Chemistry,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,ChinaZhejiang Key Laboratory of Data-Driven High-Safety Energy Materials and Applications,Ningbo Key Laboratory of Special Energy Materials and Chemistry,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,ChinaState Key Laboratory of Nuclear Physics and Technology,School of Physics,Peking University,Beijing 100871,ChinaZhejiang Key Laboratory of Data-Driven High-Safety Energy Materials and Applications,Ningbo Key Laboratory of Special Energy Materials and Chemistry,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,ChinaSchool of Advanced Materials,Shenzhen Graduate School,Peking University,Shenzhen 518055,ChinaZhejiang Key Laboratory of Data-Driven High-Safety Energy Materials and Applications,Ningbo Key Laboratory of Special Energy Materials and Chemistry,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,ChinaState Key Laboratory of Nuclear Physics and Technology,School of Physics,Peking University,Beijing 100871,China CAPT and HEDPS,College of Engineering,Peking University,Beijing 100871,China
信息技术与安全科学
MXenephotodetectorion irradiationband gap
《Nano Research》 2026 (6)
P.721-730,10
supported by the National Natural Science Foundation of China(Nos.12435017,12275336,and U23A2093).
评论