碳掺杂Co/Pt多层膜提升STT-PMTJ无磁场翻转OACHSSCD

Aims:Spin-transfer torque-perpendicular magnetic tunnel junctions(STT-PMTJ)based on Co/Pt multilayers have inherent drawbacks.Their high coercivity and large magnetic damping lead to critical magnetization flipping current and device power consumption far higher than those of the conventional CoFeB/MgO system,restricting their applications in low-power memory.Methods:Carbon-doped Co/Pt multilayers were adopted as the free layer.Micromagnetic simulations were performed to explore low-power optimization schemes.The modulation laws of carbon doping content on the critical switching current density,(Jc),energy density(Ec)and flipping time(ts)of devices were quantitatively analyzed.Results:C doping induced a non-monotonic increasing trend in Jc,Ec,and ts,with the underlying physical mechanism being the competition between the magnetic softening effect caused by C doping and the increase in damping coefficientα.Optimal performance was achieved at a C target deposition power of 50～60 W:Jc dropped to 1.3 MA/cm2;and Ec was only 0.28 pJ/cm2.Conclusions:This study verifies that non-metallic carbon doping can simultaneously optimize the intrinsic magnetic properties and spin switching efficiency of Co/Pt multilayers,offering a novel material alternative for low-power STT-PMTJ memory devices independent of the CoFeB system.