3D结构AlN MSM紫外探测器OA
3D AlN Metal-Semiconductor-Metal Structure UV Detector
为探究 3D结构对基于 AlN材料的 MSM 光电器件的性能提升,以 AlN作为光吸收层材料,在传统的 MSM 光电器件基础上,对 AlN 层进行刻蚀,引入三维(three-dimensional,3D)结构,设计和制备了 3D结构 MSM 器件(3D-MSM),并对不同刻蚀深度 MSM 器件的光电性能进行了测试和分析.根据测试结果,发现 3D-MSM器件光电性能较 MSM 器件具有显著的提升,具体在刻蚀深度为 1 μm 的 3D-MSM 器件光响应度达到了 8.2 mA/W,相较于 MSM 器件,光响应度提升了 26.1%,光电流提升了 52%,响应时间降低了 26.7%.另外,采用 3D结构器件阵列,实现了紫外探测器制备和测试,该器件阵列对不同形状图案都具有良好的成像功能.
To investigate the performance enhancement of AlN-based MSM photoelectric devices using three-dimensional(3D)structures with AlN as the light-absorption layer material,a 3D structure was introduced by etching the AlN layer based on the traditional MSM photoelectric device.A 3D-structured MSM device(3D-MSM)was designed and fabricated,and its photoelectric performance was tested and analyzed.According to the test results,the photoelectric performance of the 3D-MSM device was significantly better than that of the MSM device.Specifically,the 3D-MSM device with an etching depth of 1 μm achieved a photoresponsivity of 8.2 mA/W,which is a 26.1%increase in photoresponsivity,52%increase in photocurrent,and 26.7%reduction compared with the MSM device.In addition,the 3D structure devices array was used to prepare and test the ultraviolet detectors,and the device array had good imaging functions for different shapes and patterns.
李滔;秦文龙;饶浩勇;宋文青
邵阳学院 机械与能源工程学院,湖南 邵阳 422000||高效动力系统智能制造湖南省重点实验室,湖南 邵阳 422000邵阳学院 机械与能源工程学院,湖南 邵阳 422000邵阳学院 机械与能源工程学院,湖南 邵阳 422000湖南工学院 智能制造与机械工程学院,湖南 衡阳 421002
信息技术与安全科学
金属-半导体-金属紫外光电器件三维结构光响应度
metal-semiconductor-metalUV photodetectorthree-dimensional structurephotoresponsivity
《红外技术》 2026 (9)
1058-1063,6
湖南省自然科学基金项目(2024JJ6197)湖南省自然科学基金项目(2024JJ7495)邵阳学院研究生科研创新项目(CX2024SY048)湖南省教育厅科学研究项目(24B0698).
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