过渡金属掺杂硫化镉量子点的发光机制与应用研究进展OA

Cadmium sulfide(CdS)quantum dots,as classical Ⅱ-Ⅵ semiconductor light-emitting materials,have attracted extensive attention due to their excellent optical properties such as high quantum yield and tunable emission spectra.However,their intrinsic band-edge emission mechanism leads to a small Stokes shift and severe self-absorp‑tion effects.Furthermore,the inherent surface defects associated with their high surface-to-volume ratio easily trigger non-radiative recombination,significantly limiting their further applications in optoelectronic devices and biosens‑ing.To overcome these intrinsic performance bottlenecks,introducing transition metal ions(such as Mn2+,Cu+/Cu2+,Ag+,and Co2+)into the CdS lattice has emerged as an effective strategy to address this core problem.Doping alters the exciton recombination pathway by introducing intermediate energy levels,which not only effectively alleviates these limitations but also endows these materials with long luminescence lifetimes,large Stokes shifts,and additional magnetic and photocatalytic functionalities.This review summarizes recent advances in transition-metal-doped CdS quantum dots.First,the luminescence mechanisms and ultrafast carrier dynamics associated with different dopant ions in the CdS matrix are discussed.Second,strategies for improving luminescence efficiency through precise con‑trol of dopant locations and surface passivation are reviewed.Finally,recent applications in white light-emitting di‑odes(LEDs),fluorescence sensing,photodetectors,and photocatalysis are summarized,and the challenges associated with developing cadmium-free alternatives as well as future research directions in this field are discussed.