一种基于IPD工艺的 2~8 GHz超宽带芯片功分器OA

To address the combined requirements of miniaturization,ultra-wideband performance,and low insertion loss for power dividers in the radio frequency and microwave domain,an ultra-wideband chip power divider with a fully lumped-element structure was designed and implemented based on a high-precision integrated passive device(IPD)process on a gallium arsenide(GaAs)substrate.In terms of methodology,thin-film resistors,spiral inductors,and metal-insulator-metal(MIM)capacitors were employed to construct a multi-section equivalent transmission line network,combined with a low-Q multi-section impedance transformation matching technique guided by the Smith chart.Detailed electromagnetic simulations and parameter extraction for each passive component were carried out using ADS software,and the design was completed through co-simulation of circuit and electromagnetic fields along with iterative optimization.The chip was subsequently fabricated using the IPD process.Measured results demonstrate that the power divider operates over a frequency range from 2 GHz to 8 GHz.Excluding the inherent splitting loss,the in-band insertion loss is less than 0.8 dB,the return loss at each port exceeds 12 dB,and the output isolation is better than 16.5 dB.The measured data show good agreement with simulation predictions.The chip occupies an area of only 1.6 mm×1.2 mm×0.1 mm,achieving significant miniaturization and easy system integration.It offers broad application prospects in RF systems such as 4G/5G mobile communications,radar,and satellite communications.