基于MEMS工艺的C波段硅基微带滤波器设计与制备OA

To address the demand of radio frequency integrated systems for miniaturized,high-performance,and densely integrated filters,a C-band microstrip band-pass filter with dimensions of 7.1 mm×5.6 mm×0.8 mm was designed and fabricated using a silicon-based microelectromechanical systems(MEMS)process.The filter employed short-circuited quarter-wavelength microstrip lines as the fundamental resonant structure.And its synthesis integrates coupling coefficients and external-quality-factor method was adopted,and three-dimensional electromagnetic simulation was utilized to optimize fitter performance.Target specifications include a center frequency of 6.1 GHz,a relative bandwidth of 19.67%,insertion loss below 2.5 dB within the passband,a return loss greater than 15 dB,and out-of-band suppression above 35 dB at 4.3 GHz and 7.9 GHz.The device was fabricated using silicon-based MEMS processes:magnetron sputtering parameters were optimized to reduce the surface roughness of gold film,and the deep reactive-ion-etching process was improved to enhance the verticality of through-silicon vias.The measured results show a center frequency of 6.12 GHz,an insertion loss lower than 2.5 dB,and out-of-band suppression above 38 dB at 4.3 GHz and 7.9 GHz,showing good agreement with the simulation results.