首页|期刊导航|材料工程|脉冲微孔喷射法制备AuSn20焊球及组织演变行为

脉冲微孔喷射法制备AuSn20焊球及组织演变行为OA

Preparation and microstructure evolution of AuSn20 solder ball based on pulsated orifice ejection method

中文摘要英文摘要

在电子封装领域,金锡共晶合金(AuSn20)作为关键焊接材料,其制备工艺直接影响封装性能和可靠性.然而,受限于AuSn20合金的脆性,目前AuSn20焊球尚无高效的制备方法.本研究采用脉冲微孔喷射技术实现了AuSn20焊球的高精度、高一致性的按需制备.结果表明,在最优工艺条件下制备了多种规格AuSn20焊球,最小规格为50 μm,目标粒径标准偏差最大为1.58 μm,显著提高了制备精度.微观组织分析揭示,焊球主要由δ-AuSn相和ζ′-Au5Sn相共晶组织构成,未观察到异常新相生成.回流处理后,焊球内部成分分布趋于均匀.研究发现,由于扩散阻挡层Ni原子的协同扩散,在界面接头处形成了(Au,Ni)Sn和(Au,Ni)3Sn2等金属间化合物.所制备的AuSn20焊球不仅实现了粒径精确可控和热历史一致性,且在模拟服役条件下表现出优异的界面稳定性和结构完整性,为金锡合金钎料在先进电子封装领域开辟了新的应用途径.

In the field of electronic packaging,Au-Sn eutectic alloy(AuSn20)serves as key solder materials,and its preparation process directly affects the packaging performance and reliability.However,due to the brittleness of AuSn20,there is currently no efficient method for the preparation of AuSn20 solder balls.This study uses pulsated orifice ejection method to achieve the high precision and consistency of the on-demand preparation of AuSn20 solder balls.The results show that various specifications of AuSn20 solder balls are prepared under optimal process conditions,with the smallest specification being 50 μm,and the maximum standard deviation of the target particle size being 1.58 μm,significantly improving the preparation accuracy.Microstructural analysis reveals that the solder balls are mainly composed of δ-AuSn and ζ′-Au5Sn eutectic phases,with no abnormal new phases observed.After reflow treatment,the composition distribution inside the solder ball tends to be uniform.Interface reaction studies show that due to the synergistic diffusion of Ni atoms in the diffusion barrier layer,a complex intermetallic compounds(Au,Ni)Sn and(Au,Ni)3Sn2 are formed at the interface joint.The AuSn20 solder balls prepared in this study not only achieve precise control of particle size and consistent thermal history,but also show excellent interface stability and structural integrity under simulated service conditions,opening up new application avenues for Au-Sn alloy brazing materials in advanced electronic packaging.

董伟;葛凤跃;许富民

大连理工大学 材料科学与工程学院,辽宁 大连 116024大连理工大学 材料科学与工程学院,辽宁 大连 116024大连理工大学 材料科学与工程学院,辽宁 大连 116024

通用工业技术

脉冲微孔喷射法AuSn20合金焊球制备粒径调控

pulsated orifice ejection methodAuSn20 alloysolder ball preparationparticle size control

《材料工程》 2026 (9)

91-98,8

国家自然科学基金项目(51571052)

10.11868/j.issn.1001-4381.2024.000864

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