高性能钽酸锂薄膜与碳化硅衬底的声表面波谐振器OA

In this paper,a shear horizontal(SH)surface acoustic wave(SAW)resonator based on silicon carbide substrate is proposed,which has a significant improvement in the quality factor compared with the conventional Si substrate-based SAW resonator.The geometrical parameters of the device are determined by analyzing the SH wave propagation characteristics on the LiTaO3/SiO2/SiC multilayer substrate.The micro-nano processing techniques are used to prepare the LiTaO3/SiO2/Si device,and the comparative experiments are carried out.The results show that the LiTaO3/SiO2/SiC device has a quality factor two times that of the LiTaO3/SiO2/Si device,and confirms to the theoretical acoustic wave propagation characteristics.This device is more applicable for filters,oscillators,and sensors than conventional devices.