IGBT剩余寿命预测研究进展及其挑战OA

As the core devices of power electronic systems,Insulated Gate Bipolar Transistor(IGBT)is regarded as a decisive component for the stable operation of the whole system,and their reliability is highly valued.The research status and future prospects of remaining useful life prediction for IGBT are summarized.The module structures,failure mechanisms and characteristic failure parameters of the IGBT are introduced.Relevant literatures on IGBT remaining useful life prediction driven by physical models and data are systematically sorted out.On this basis,a remaining useful life prediction method based on digital twin is put forward for the IGBT.The origin,basic concept,and technical connotation of the digital twin and its application value in predictive maintenance are elaborated in detail.The characteristics and applicable scenarios of the above method are analyzed,and an overall architecture of digital twin-based remaining useful life prediction for IGBT is established.Finally,the existing challenges and future development trends in this research field are prospected,including multi-physics coupling modeling,multi-source heterogeneous data fusion,standardized framework establishment,real-time performance optimization and uncertainty quantification.Theoretical references and technical supports are provided for digital twin-based health management of IGBT in this work.