IMS架构IGBT单管热优化及来料公差控制OA

Compared with IGBT discretes with DBC architecture,IGBT discretes with IMS architecture possess unique advantages and show great application potential.Nevertheless,the relatively high junction-to-case thermal resistance acts as a critical bottleneck limiting their large-scale engineering applications,so it is urgent to optimize and improve their thermal performance.The Flotherm computational fluid dynamics simulation software is adopted for modeling and simulation.Combined with orthogonal test,range analysis and variance analysis,the thermal resistance of IMS-architecture IGBT discretes is optimized.By precisely adjusting the thicknesses of the solder layer,trace copper layer,insulating layer and substrate,the junction-to-case thermal resistance is reduced from 6.105 K/W to 4.645 K/W,with a reduction of approximately 25％.The junction thermal resistances of the optimized device under different power dissipation conditions are all lower than those of the original device.Through the calculation and comparison of F-values,the trace copper layer thickness and solder layer thickness are confirmed to be the dominant factors affecting thermal resistance.Accordingly,the incoming material tolerances of the insulating layer and trace copper layer of the devices need to be strictly controlled.