Naphthalimide-based nonionic sulfonate photoacid generators:structure-property relationship and sub-30 nm resolution lithographyOA
Naphthalimide-based nonionic sulfonate photoacid generators:structure-property relationship and sub-30 nm resolution lithography
Changchang Zhuang;Jiao Chen;Tao Wang;Jun Zhao;Haoyuan Li;Hanshen Xin;Jianhua Zhang
School of Microelectronics,Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials,Shanghai University,Shanghai,ChinaSchool of Microelectronics,Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials,Shanghai University,Shanghai,ChinaSchool of Microelectronics,Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials,Shanghai University,Shanghai,ChinaShanghai Synchrotron Radiation Facility,Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai,ChinaSchool of Microelectronics,Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials,Shanghai University,Shanghai,ChinaSchool of Microelectronics,Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials,Shanghai University,Shanghai,ChinaSchool of Microelectronics,Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials,Shanghai University,Shanghai,China
Nonionic photoacid generatorsNaphthalimide-benzenesulfonateAcid generation quantum yieldStructure-property relationshipSub-30 nm lithography
Nonionic photoacid generatorsNaphthalimide-benzenesulfonateAcid generation quantum yieldStructure-property relationshipSub-30 nm lithography
《工业化学与材料（英文）》 2026 (4)
517-529,13
The authors thank the BL08U1B beamline of the Shanghai Synchrotron Radiation Facility for providing the EBL.The National Natural Science Foundation of China(grant numbers:22090013)and the Shanghai Committee of Science and Technology(grant number:YDZX20213100002672 and 21QA1402900)provided financial support for this study.
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