852nm波段半导体激光器研究进展OA

Semiconductor lasers emitting at 852 nm are essential light sources for cesium-based atomic sys-tems because their wavelength is resonant with the Cs D2 transition.They support cesium atomic clocks,quantum sensing,cold-atom manipulation,and precision spectroscopy.This review addresses the need for a systematic assessment of 852 nm laser technologies by summarizing recent advances in quantum-well material systems,device architectures,performance optimization,and engineering applications.The de-velopment of AlGaAs/GaAs,aluminum-free InGaAsP/GaAs,and InAlGaAs/GaAs active-region plat-forms is first reviewed.The effects of material design on carrier confinement,facet reliability,thermal sta-bility,and electro-optical conversion efficiency are analyzed.Major device configurations—including verti-cal-cavity surface-emitting lasers,distributed-feedback lasers,external-cavity diode lasers,vertical exter-nal-cavity surface-emitting lasers,and high-power edge-emitting lasers-are then evaluated according to their structural characteristics and performance metrics.Their relative capabilities in linewidth,output power,slope efficiency,single-mode stability,and system-level integration are compared.Commercial 852 nm semiconductor laser products are further assessed from an application-oriented perspective.Current do-mestic activities are concentrated primarily on product distribution,module packaging,and system integration,whereas core laser chips and gain chips remain largely dependent on overseas suppliers.Future development should prioritize narrower linewidths,higher output power,improved electro-optical efficiency,wider operat-ing-temperature ranges,enhanced reliability,and chip-scale integration.These advances are expected to sup-port next-generation cesium atomic clocks and quantum precision-measurement systems.