Scalable high-temperature superconducting diodes enabled by intrinsic Josephson junctionsOA
Scalable high-temperature superconducting diodes enabled by intrinsic Josephson junctions
Zihan Wei;Ziyu Song;Zixi Wang;Yunfan Wang;Milorad V.Milošević;Yong-Lei Wang;Huabing Wang;Peiheng Wu;Youkai Qiao;Yang-Yang Lyu;Da Wang;Tianyu Li;Leonardo Rodrigues Cadorim;Ping Zhang;Wen-Cheng Yue;Dingding Li
Research Institute of Superconductor Electronics(RISE)&Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China||Purple Mountain Laboratories,Nanjing 211111,ChinaResearch Institute of Superconductor Electronics(RISE)&Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,ChinaResearch Institute of Superconductor Electronics(RISE)&Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,ChinaResearch Institute of Superconductor Electronics(RISE)&Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,ChinaCOMMIT,Department of Physics,University of Antwerp,Antwerp 2000,BelgiumResearch Institute of Superconductor Electronics(RISE)&Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China||Purple Mountain Laboratories,Nanjing 211111,China||State Key Laboratory of Spintronics Devices and Technologies,Nanjing University,Nanjing 210093,ChinaResearch Institute of Superconductor Electronics(RISE)&Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China||Purple Mountain Laboratories,Nanjing 211111,ChinaResearch Institute of Superconductor Electronics(RISE)&Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China||Purple Mountain Laboratories,Nanjing 211111,ChinaNational Laboratory of Solid State Microstructures &School of Physics,Nanjing University,Nanjing 210023,ChinaResearch Institute of Superconductor Electronics(RISE)&Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,ChinaNational Laboratory of Solid State Microstructures &School of Physics,Nanjing University,Nanjing 210023,ChinaResearch Institute of Superconductor Electronics(RISE)&Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,ChinaCOMMIT,Department of Physics,University of Antwerp,Antwerp 2000,BelgiumResearch Institute of Superconductor Electronics(RISE)&Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China||Purple Mountain Laboratories,Nanjing 211111,ChinaResearch Institute of Superconductor Electronics(RISE)&Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,ChinaResearch Institute of Superconductor Electronics(RISE)&Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China||Purple Mountain Laboratories,Nanjing 211111,China
high-temperature superconducting diodesintrinsic Josephson junctionstunable nonreciprocityzero-field memory effectscalability
high-temperature superconducting diodesintrinsic Josephson junctionstunable nonreciprocityzero-field memory effectscalability
《国家科学评论（英文版）》 2026 (14)
14-21,8
This work was supported by the National Key R&D Pro-gram of China(2021YFA0718802,2022YFA1403201 and 2024YFA1408100),the Innovation Program for Quantum Sci-ence and Technology(2024ZD0301300),the National Nat-ural Science Foundation of China(62288101,62274086,12274205,62401647 and 62571230),Jiangsu Key Labora-tory of Advanced Techniques for Manipulating Electro-magnetic Waves,Natural Science Foundation of Jiangsu Province(BK20240290),Frontier Technologies R&D Pro-gram of Jiangsu(BF2024058),Jiangsu Outstanding Postdoc-toral Program(2024ZB860),Research Foundation-Flanders(FWO),EU-COST Action(CA21144 SUPEROUMAP)and US Army Research Office(W911NF-24-1-0145).
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