首页|期刊导航|西北农业学报|邻苯二甲酸处理下外源硅对辣椒幼苗光合与抗氧化特性的影响

邻苯二甲酸处理下外源硅对辣椒幼苗光合与抗氧化特性的影响OA

Effects of Exogenous Silicon on Photosynthetic and Antioxidant Characteristics of Pepper Seedlings under Phthalic Acid Treatment

中文摘要英文摘要

探讨外源硅(Si)对邻苯二甲酸(PA)处理下辣椒幼苗生长与抗氧化特性的影响,以期为设施辣椒连作障碍治理提供理论依据.以'玛索'辣椒为材料,采用基质盆栽法,设置包括不同PA浓度(0、0.5、1.0、1.5 mmol·L-1)与1.5 mmol·L-1 Si的7个处理,系统测定幼苗生物量、根系形态、光合荧光参数及抗氧化指标.结果表明:(1)PA对辣椒幼苗生长呈"低促高抑"效应:0.5 mmol·L-1 PA提高根系平均直径与总体积;而1.0与1.5 mmol·L-1 PA则可引发辣椒的自毒胁迫,显著抑制幼苗生物量、根长、根表面积及光合参数(Pn、Gs),降低Fv/Fm,加剧膜脂过氧化,并抑制SOD、POD等抗氧化酶活性,其中1.5 mmol·L-1 PA胁迫最为显著.(2)添加1.5 mmol·L-1Si可有效缓解高浓度PA引发的自毒胁迫:与T5(1.5 mmol·L-1 PA)相比,T6处理(1.5 mmol·L-1 PA+1.5 mmol·L-1 Si)使地上部与地下部鲜质量显著提高,总根长、根表面积分别增加20.66%和24.80%,叶绿素a、b含量分别上升28.30%与30.30%,Pn与Fv/Fm显著提升,叶片MDA与O-·2含量分别降低34.50%和36.57%,SOD活性显著提高85.70%.此外,在0.5 mmol·L-1 PA条件下,外源Si与PA对辣椒幼苗生长、光合特性与抗氧化特性表现出协同促进效应.综上,1.5 mmol·L-1的外源Si可通过增强光合性能与抗氧化防御,缓解PA自毒胁迫,促进辣椒幼苗生长,且在低PA水平下具有协同增益作用.

Phthalic acid(PA)is one of the main autotoxic substances produced in pepper under protec-ted cultivation.Its accumulation significantly affects crop growth,development,yield,and quality,and is an important cause of continuous cropping obstacles.Furthermore,exogenous silicon(Si)has been proven to effectively enhance crop stress tolerance.Based on this,the present study investigated the effects of exogenous Si on the growth and antioxidant characteristics of pepper seedlings under phthal-ic acid(PA)treatment,aiming to provide a theoretical basis for the management of continuous crop-ping obstacles in protected pepper cultivation.Using'Masuo'pepper as the experimental material and adopting the substrate pot culture method,seven treatments were set up,including different PA con-centrations(0,0.5,1.0,1.5 mmol·L-1)and 1.5 mmol·L-1 Si.The seedling biomass,root morpholo-gy,photosynthetic and fluorescence parameters,and antioxidant indexes were systematically measured.The results showed that:(1)PA had a"low-concentration promotion and high-concentration inhibi-tion"effect on the growth of pepper seedlings.0.5 mmol·L-1 PA increased the average root diameter and total volume.However,1.0 and 1.5 mmol·L-1 PA induced autotoxic stress in pepper seedlings,significantly inhibited seedling biomass,root length,root surface area,and photosynthetic parameters(Pn,Gs),reduced Fv/Fm,intensified membrane lipid peroxidation,and suppressed the activities of an-tioxidant enzymes such as SOD and POD.The autotoxic stress induced by 1.5 mmol·L-1 PA was the most severe.(2)Application of Exogenous silicon(Si)at 1.5 mmol·L-1 effectively alleviated PA-in-duced autotoxic stress.Compared with the T5(1.5 mmol·L-1 PA alone),the T6 treatment(1.5 mmol·L-1 PA+1.5 mmol·L-1 Si)significantly enhanced both shoot and root fresh weights.Total root length and root surface area increased by 20.66%and 24.80%,respectively.Chlorophyll a and b contents increased by 28.30%and 30.30%,respectively.Pn and Fv/Fm were significantly increased.Leaf MDA and superoxide anion(O-·2)contents decreased by 34.50%and 36.57%,respectively,and SOD activity increased by 85.70%.In addition,under the condition of 0.5 mmol·L-1 PA,exogenous Si and PA showed a synergistic effect on the growth,photosynthetic characteristics,and antioxidant characteristics of pepper seedlings.In conclusion,1.5 mmol·L-1 exogenous Si can alleviate PA auto-toxic stress and promote the growth of pepper seedlings by enhancing photosynthetic performance and antioxidant defense,and it has a synergistic effect at low PA levels.

温佳豪;方明媛;刘思源;张帆;胡军;张毅

山西农业大学,山西太谷 030801山西农业大学,山西太谷 030801山西农业大学,山西太谷 030801山西农业大学,山西太谷 030801山西农业大学,山西太谷 030801山西农业大学,山西太谷 030801

辣椒外源硅邻苯二甲酸自毒胁迫光合特性抗氧化特性

PepperExogenous siliconPhthalic acidAutotoxicity stressPhotosynthetic character-isticsAntioxidant characteristics

《西北农业学报》 2026 (8)

1494-1502,9

山西省高等学校大学生创新训练计划(20250257)山西省现代农业产业技术体系建设专项(2026CYJSTX08). Innovation Training Program for College Students in Shanxi Province's Higher Ed-ucation Institutions(No.20250257)the Earmarked Fund for Modern Agro-industry Technology Re-search System in Shanxi Province(No.2026CYJSTX08).

10.7606/j.issn.1004-1389.2026.08.010

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