反铁电薄膜材料体系、研究现状及应用展望OA

Research on antiferroelectric materials has spanned more than seventy years,and their unique field-induced phase transition behavior has demonstrated significant appli-cation value in dielectric energy storage devices,novel information devices,and thermal man-agement components.With advancements in thin-film growth techniques and the growing demand for miniaturization and integration of electronic devices,antiferroelectric thin films have attracted increasing attention.Numerous studies have shown that transitioning from bulk to thin-film forms,antiferroelectric materials exhibit novel physical properties distinct from their bulk counterparts,while also facing challenges such as the weakening or even disap-pearance of antiferroelectricity below a critical thickness due to size effects.In this context,this article systematically reviews the development history of antiferroelectric materials,from the physical origin of antiferroelectricity,the structural and phase transition characteristics of typ-ical material systems(including perovskite-structured PbZrO3,PbHfO3,NaNbO3,AgNbO3,and fluorite-structured HfxZr1-xO2),to their diverse functional device applications such as energy storage capacitors,antiferroelectric random access memory,antiferroelectric field-effect transistors,antiferroelectric tunnel junctions,and electrocaloric effects.We hope to attract more researchers to pay attention to the development of antiferroelectric thin films,to deeply explore their yet-to-be-fully-revealed microscopic mechanisms,and to jointly promote continu-ous breakthroughs in new materials,new devices,and new applications of antiferroelectric thin films.