基于MXenes/微构造硅异质结光电探调控特性研究OA

Surface-microstructured silicon exhibits unique optical properties,demonstrating promising potential for ap-plications in photoelectric sensors,solar cells,and related fields.To further explore the optoelectronic modulation ef-fects based on its surface architecture,this study presents a novel heterojunction photodetector constructed by integrat-ing MXenes(Ti3C2Tx)with microstructured silicon substrate through spin-coating and other fabrication techniques.Com-parative studies were conducted on commercial silicon,microstructured silicon,and Ti3C2Tx/microstructured silicon de-vices under varying wavelengths and optical power densities.The current-voltage(I-V)characteristics and photores-ponse performance reveal that the Ti3C2Tx/microstructured silicon photodetector exhibits significantly superior external quantum efficiency(EQE)and responsivity across a broad spectral range of 200-1750 nm compared to commercial sili-con and microstructured silicon detectors.Notably,in the near-infrared region(1100-1800 nm),the device demon-strates exceptional performance,achieving EQE exceeding 1000%and responsivity greater than 10 A/W.In contrast,commercial silicon photodetector in the same spectral range shows EQE below 10%and responsivity no higher than 0.3 A/W,while microstructured silicon photodetector exhibits EQE of below 15%and responsivity limited to 0.08 A/W.Further dynamic response and bias-dependent analyses indicate that the Ti3C2Tx coating,owing to its high conductivity and the built-in electric field formed at the heterojunction with microstructured silicon,significantly enhances detection capability from the NIR to MIR.Additionally,the response time is remarkably reduced from 38 ns to 20 ns.This het-erojunction holds great promise for high-speed photodetection in optical communications,LIDAR,photoelectric sens-ing,and other advanced optoelectronic applications.