Advances in InX(X:As,Sb)Quantum Dots Infrared PhotodetectorsOA
Advances in InX(X:As,Sb)Quantum Dots Infrared Photodetectors
Huiling TAI;Wenxin ZENG;Zaihua DUAN;Yadong JIANG
State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China
Quantum dotsInAsInSbinfrared photodetector
Quantum dotsInAsInSbinfrared photodetector
《光子传感器(英文版)》 2026 (2)
55-85,31
This work is supported by the National Natural Science Fund for Distinguished Young Scholars(Grant No.62225106),National Natural Science Foundation of China(Grant No.U24A20229),and Sichuan Innovation Research Group Project(Grant No.2025NSFTD0008).
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