Transport signatures of gate-tunable topological phase transition in ultrathinβ-Ag_(2)TeOA
The topological phase transition(TPT)between trivial and nontrivial quantum states has attracted significant research interests due to its fundamental importance in condensed matter physics and potential applications in next-generation low-power electronics.However,previous TPT has mainly been achieved by structural modification and chemical doping on topological materials,which presents substantial challenges for practical device applications.Here,we report the direct observation of device-level reversible TPT inβ-Ag_(2)Te nanoflakes controlled by an out-of-plane gate voltage.The quantum oscillations inβ-Ag_(2)Te exhibit aπBerry phase when applying a small top-gate voltage,while displaying a topologically trivial Berry phase under a high gate voltage.Theoretical calculations reveal that this electrically induced TPT originates from the Stark-effect-mediated band structure modification under external electric fields.Based on this gate-tunable TPT inβ-Ag_(2)Te,we successfully fabricate the preliminary prototype device of TPT field-effect transistor,exhibiting a high current on-off ratio exceeding 104.This work establishes an electric-field control paradigm for topological phase engineering,and builds a crucial bridge between fundamental topological physics and novel device concepts.
Wei Ai;Xiao-Feng Luo;Zhaochao Liu;Ying Deng;Zunxian Lv;Yuyu He;Lingyue Li;Xuewen Fu;Feng Luo;Jingyue Wang;Jin-Zhu Zhao;Jinxiong Wu
Tianjin Key Lab for Rare Earth Materials and Applications,Center for Rare Earth and Inorganic Functional Materials,Collaborative Innovation Center of Materials Science,School of Materials Science and Engineering,Academy for Advanced Interdisciplinary Studies,Nankai University,Tianjin 300350,ChinaGuangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter,Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials,School of Physics,South China Normal University,Guangzhou 510006,China Guangdong-Hong Kong Joint Laboratory of Quantum Matter,Frontier Research Institute for Physics,South China Normal University,Guangzhou 510006,ChinaTianjin Key Lab for Rare Earth Materials and Applications,Center for Rare Earth and Inorganic Functional Materials,Collaborative Innovation Center of Materials Science,School of Materials Science and Engineering,Academy for Advanced Interdisciplinary Studies,Nankai University,Tianjin 300350,ChinaUltrafast Electron Microscopy Laboratory,Key Laboratory of Weak-Light Nonlinear Photonics,School of Physics,Nankai University,Tianjin 300071,ChinaTianjin Key Lab for Rare Earth Materials and Applications,Center for Rare Earth and Inorganic Functional Materials,Collaborative Innovation Center of Materials Science,School of Materials Science and Engineering,Academy for Advanced Interdisciplinary Studies,Nankai University,Tianjin 300350,ChinaTianjin Key Lab for Rare Earth Materials and Applications,Center for Rare Earth and Inorganic Functional Materials,Collaborative Innovation Center of Materials Science,School of Materials Science and Engineering,Academy for Advanced Interdisciplinary Studies,Nankai University,Tianjin 300350,ChinaTianjin Key Lab for Rare Earth Materials and Applications,Center for Rare Earth and Inorganic Functional Materials,Collaborative Innovation Center of Materials Science,School of Materials Science and Engineering,Academy for Advanced Interdisciplinary Studies,Nankai University,Tianjin 300350,ChinaUltrafast Electron Microscopy Laboratory,Key Laboratory of Weak-Light Nonlinear Photonics,School of Physics,Nankai University,Tianjin 300071,ChinaTianjin Key Lab for Rare Earth Materials and Applications,Center for Rare Earth and Inorganic Functional Materials,Collaborative Innovation Center of Materials Science,School of Materials Science and Engineering,Academy for Advanced Interdisciplinary Studies,Nankai University,Tianjin 300350,ChinaShandong Key Laboratory of Intelligent Energy Materials,School of Materials Science and Engineering,China University of Petroleum(East China),Qingdao 266580,ChinaGuangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter,Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials,School of Physics,South China Normal University,Guangzhou 510006,China Guangdong-Hong Kong Joint Laboratory of Quantum Matter,Frontier Research Institute for Physics,South China Normal University,Guangzhou 510006,China Center for Computational Science and Engineering,Southern University of Science and Technology,Shenzhen 518055,ChinaTianjin Key Lab for Rare Earth Materials and Applications,Center for Rare Earth and Inorganic Functional Materials,Collaborative Innovation Center of Materials Science,School of Materials Science and Engineering,Academy for Advanced Interdisciplinary Studies,Nankai University,Tianjin 300350,China
数理科学
topological phase transitiongate-tunableStark effecttopological insulatorBerry phase
《National Science Review》 2026 (12)
P.40-49,10
support from the National Key R&D Program of China(2024YFA1211200)the National Natural Science Foundation of China(62474098)the Fundamental Research Funds for the Central Universities(023-63263171)support from the National Natural Science Foundation of China(12274145)Guangdong Basic and Applied Basic Research Foundation,China(2023A1515010672)Guangdong Provincial Uni-versity Science and Technology Program(2023KTSCX029)support from Taishan Scholars Foun-dation of Shandong Province(tsqn202507115)Qingdao Natural Science Foundation(25-1-1-195-zyyd-jch).
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