Over 1.65GW cm-2sr-1 brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSELOA
Over 1.65GW cm-2sr-1 brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL
Zhicheng Zhang;Xiao Li;Chaofan Zhang;Jun Wang;Wenbo Zhan;Yao Xiao;Chen Luo;Hao Zhou;Wenfan Yang;Yang Cheng;Hao Yu;Quanling Li
College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,ChinaCollege of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,ChinaCollege of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,ChinaCollege of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,China||Suzhou Everbright Photonics Co.,Ltd,Suzhou 215163,China||College of Electronics and Information Engineering,Sichuan University,Chengdu 610064,ChinaSuzhou Everbright Photonics Co.,Ltd,Suzhou 215163,ChinaSuzhou Everbright Photonics Co.,Ltd,Suzhou 215163,ChinaCollege of Electronics and Information Engineering,Sichuan University,Chengdu 610064,ChinaCollege of Electronics and Information Engineering,Sichuan University,Chengdu 610064,ChinaSuzhou Everbright Photonics Co.,Ltd,Suzhou 215163,ChinaCollege of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,ChinaCollege of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,China||Suzhou Everbright Photonics Co.,Ltd,Suzhou 215163,ChinaSuzhou Everbright Photonics Co.,Ltd,Suzhou 215163,China
《光：科学与应用（英文版）》 2026 (6)
1814-1826,13
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