Interface engineering for high-efficiency spin injection and polarized emission in GaN-based devicesOA
Interface engineering for high-efficiency spin injection and polarized emission in GaN-based devices
Qihong Lai;Yaping Wu;Xu Li;Zhiming Wu;Junyong Kang;Weilin Hu;Mingyu Chen;Hongshu Li;Ying Ye;Guimin Liao;Jian Huang;Xuanli Zheng;Lijing Kong
Department of Physics,Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education,OSED,Fujian Provincial Key Laboratory of Semiconductor Materials and Applications,Xiamen University,Xiamen 361005,ChinaDepartment of Physics,Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education,OSED,Fujian Provincial Key Laboratory of Semiconductor Materials and Applications,Xiamen University,Xiamen 361005,ChinaDepartment of Physics,Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education,OSED,Fujian Provincial Key Laboratory of Semiconductor Materials and Applications,Xiamen University,Xiamen 361005,ChinaDepartment of Physics,Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education,OSED,Fujian Provincial Key Laboratory of Semiconductor Materials and Applications,Xiamen University,Xiamen 361005,ChinaDepartment of Physics,Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education,OSED,Fujian Provincial Key Laboratory of Semiconductor Materials and Applications,Xiamen University,Xiamen 361005,ChinaDepartment of Physics,Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education,OSED,Fujian Provincial Key Laboratory of Semiconductor Materials and Applications,Xiamen University,Xiamen 361005,ChinaDepartment of Physics,Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education,OSED,Fujian Provincial Key Laboratory of Semiconductor Materials and Applications,Xiamen University,Xiamen 361005,ChinaDepartment of Physics,Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education,OSED,Fujian Provincial Key Laboratory of Semiconductor Materials and Applications,Xiamen University,Xiamen 361005,ChinaDepartment of Physics,Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education,OSED,Fujian Provincial Key Laboratory of Semiconductor Materials and Applications,Xiamen University,Xiamen 361005,ChinaDepartment of Physics,Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education,OSED,Fujian Provincial Key Laboratory of Semiconductor Materials and Applications,Xiamen University,Xiamen 361005,ChinaDepartment of Physics,Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education,OSED,Fujian Provincial Key Laboratory of Semiconductor Materials and Applications,Xiamen University,Xiamen 361005,ChinaDepartment of Physics,Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education,OSED,Fujian Provincial Key Laboratory of Semiconductor Materials and Applications,Xiamen University,Xiamen 361005,ChinaDepartment of Physics,Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education,OSED,Fujian Provincial Key Laboratory of Semiconductor Materials and Applications,Xiamen University,Xiamen 361005,China
spin injectiontunnel junctiongrapheneⅢ-nitride semiconductorsspin light-emitting diodes
spin injectiontunnel junctiongrapheneⅢ-nitride semiconductorsspin light-emitting diodes
《半导体学报（英文版）》 2026 (7)
53-60,8
The work was funded by the National Natural Science Foundation of China (Nos.62374144,62574174,62274139,62304188,62574173,and 62374143),the Natural Science Foundation of Fujian Province (No.2025J011001),and the Basic Research Funds for Central Universities (No.20720250065).
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