基于CRISPR/Cas9基因编辑技术研究AT1同源基因对小麦耐盐碱性的影响OA
Effect of AT1 Homolog in Wheat to Saline-alkali Tolerance Based on CRISPR/Cas9
alkaline tolerance 1(AT1)基因是在高粱中克隆的与碱耐受性有关的基因,在小麦4A、7A、7D染色体上存在AT1同源基因.为探索AT1基因在小麦耐盐碱响应中的作用,利用CRISPR/Cas9基因编辑技术以小麦品种'Fielder'为背景构建了AT1基因的敲除株系,共获得8份基因编辑株系,其中,6个株系的4A、7A、7D染色体上AT1同源基因均发生了编辑.分别利用中性盐溶液(100 mmol·L-1)、碱性盐溶液(60、125 mmol·L-1)以及盐碱溶液(135 mmol·L-1)进行胁迫处理,并对野生型和突变体的苗长、鲜重、干重进行测定分析.结果表明,AT1基因编辑材料与野生型在不同胁迫处理下的显著性水平存在差异:盐胁迫下的显著性水平最低,盐碱胁迫下次之,碱胁迫下的显著性水平最高.研究结果为利用AT1同源基因提高小麦耐盐碱能力提供了参考.
alkaline tolerance 1(AT1),a gene cloned from sorghum,is involved in alkaline tolerance.In wheat,AT1 homologs are located on chromosomes 4A,7A and 7D.To explore the role of AT1 gene in improving salt-alkali tolerance of wheat,CRISPR/Cas9 gene editing technology was used to construct AT1 gene knockout lines with the wheat variety'Fielder'as the background.A total of 8 gene-edited lines were obtained,among which AT1 homologous genes on chromosomes 4A,7A and 7D were all edited in 6 lines.Plants were subjected to neutral salt stress(100 mmol·L-1),alkaline salt stress(60,125 mmol·L-1)and combined saline-alkali stress(135 mmol·L-1)and the seedling length,fresh weight and dry weight of wild-type plants and mutants were determined and analyzed.The results showed that there were differences in the significance levels of AT1 gene-edited materials under different stress treatments:the significance level was the lowest under salt stress,followed by that under saline-alkali stress,and the highest under alkali stress.Above results provided insights into the potential application of AT1 homologs in enhancing saline-alkali tolerance in wheat.
禹亚妮;赵齐;林冰冰;韩文政;刘琰;王岩;吴佳洁
山东农业大学农学院,小麦育种全国重点实验室,山东 泰安 271018山东农业大学农学院,小麦育种全国重点实验室,山东 泰安 271018山东农业大学农学院,小麦育种全国重点实验室,山东 泰安 271018山东农业大学农学院,小麦育种全国重点实验室,山东 泰安 271018山东农业大学农学院,小麦育种全国重点实验室,山东 泰安 271018山东农业大学农学院,小麦育种全国重点实验室,山东 泰安 271018山东农业大学农学院,小麦育种全国重点实验室,山东 泰安 271018
农业科技
小麦耐盐碱CRISPR/Cas9alkaline tolerance 1
wheatsalt-alkali resistanceCRISPR/Cas9alkaline tolerance 1
《中国农业科技导报》 2026 (6)
32-39,8
国家重点研发计划项目(2022YFD1201700).
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