纳秒级高精度自触发抗辐射加固电子开关的研制OA

A nanosecond-scale high-precision self-triggered radiation-hardened electronic switch was developed for power-off protection of electronic systems in radiation enviroments.Based on the working principle,the topology of the switch circuit was designed,comprising a self-trigger circuit,a logic control circuit,and a power dirve circuit.Multi-layer slow-varying epitaxial process and SiO2+Si3N4 composite gate dielectric process were proposed to simultaneously achieve transient-dose-rate latchup hardening and total ionizing dose hardening.The radiation hardening performance of the electronic switch was comprehensively verified by irradiation tests using a pulsed γ-ray accelerator and cobalt-60 source.The irradiation results demonstrate that the electronic switch can normally self-trigger to power off and then restore power supply under a pulsed γ-ray irradiation.The power-off response time of the electronic switch is on the order of hundreds of nanoseconds,with stable and reliable power-off duration.The transient dose rate latchup hardening level reaches 5.4×109 Gy(Si)·s-1,and the total ionizing dose hardening level reaches 3 000 Gy(Si).