基于有机-无机范德瓦耳斯异质结的自供电日盲光电探测及其单像素点光学成像OA
Self-powered solar-blind photodetector and single-pixel optical imaging based on organic-inorganic van der Waals heterojunctions
日盲紫外光探测在导弹追踪、紫外光通信、生物医疗等领域具有重要的潜在应用价值,开发具有自供电特性的光电传感器能够解决传统器件依赖外部偏压和能耗高的瓶颈问题.本文利用新一代超宽禁带半导体氧化镓(Ga2O3),通过在等离子体增强化学气相沉积(PECVD)制备的β-Ga2O3薄膜上旋涂聚3,4-乙烯二氧噻吩/聚苯乙烯磺酸盐(PEDOT:PSS)制备了一种有机-无机异质结光电探测器,并对其光电性能及单像素成像应用潜力进行了研究.结果表明,探测器在零偏压、光照强度为47 μW/cm2的254 nm波长日盲紫外光照射下,光暗电流比为8.8×103,光响应度为0.106 A/W,外量子效率为38%,并且光电流随光照强度成近线性变化趋势说明制备的探测器具备优异的光响应性能.此外,该探测器可通过固定步长、逐点扫描、信号采集、数据处理及图像重构的方法,再现"IMU"字母图像,展现出其在单像素日盲光学成像方面的应用前景.
Solar-blind ultraviolet photodetector holds significant application potential in fields such as military defense,communication,medical treatment,and environmental monitoring.Developing self-powered detectors is essential for eliminating the dependence on external bias voltage and reducing high energy consumption of traditional devices.In this study,high-quality β-Ga2O3 thin films were prepared via plasma-enhanced chemical vapor deposition and which were subsequently combined with spin-coated PEDOT:PSS to fabricate an organic-inorganic van der Waals heterojunction self-powered solar-blind photodetector.Its photoelectric performance and potential for single-pixel imaging applications were systematically investigated.Structural characterization reveals that the prepared β-Ga2O3 thin film exhibits good crystallinity and a smooth surface,with selective absorption in the solar-blind ultraviolet region and an optical bandgap of approximately 4.92 eV.Under zero bias and 254 nm illumination at intensity of 47 μW/cm2,the detector achieves a photo-to-dark current ratio of 8.8 ×103,a responsivity of 0.106 A/W,and an external quantum efficiency of 38%.The photocurrent exhibits a near-linear dependence on light intensity.The device operates stably under both positive and negative bias,with low dark current,minimal noise,and excellent weak-light detection capability.By employing a fixed-step point-by-point scanning method,the detector achieved single-pixel solar-blind ultraviolet optical imaging of the letters"IMU",demonstrating good imaging quality and high fidelity.The heterojunction detector developed in this study combines the advantages of self-powered operation,simple structure,and low cost,overcoming the limitations of traditional materials used in single-pixel imaging approaches,thereby offering a promising strategy for improving solar-blind ultraviolet detection technology and demonstrating significant potential for practical applications in the field of single-pixel optical imaging.
王霞;李磊;李山;张嘉汉;刘增;唐为华
山西工程技术学院电气与控制工程系,阳泉 045000南京邮电大学集成电路科学与工程学院(产教融合学院),氧化镓半导体创新中心(IC-GAO),南京 210023南京邮电大学集成电路科学与工程学院(产教融合学院),氧化镓半导体创新中心(IC-GAO),南京 210023内蒙古大学电子信息工程学院,光子电子智能感知器件团队,呼和浩特 010021内蒙古大学电子信息工程学院,光子电子智能感知器件团队,呼和浩特 010021南京邮电大学集成电路科学与工程学院(产教融合学院),氧化镓半导体创新中心(IC-GAO),南京 210023
日盲紫外探测器氧化镓异质结自供电
solar-blind ultraviolet photodetectorgallium oxideheterojunctionself-power
《物理学报》 2026 (11)
254-262,9
国家自然科学基金(批准号:U23A20349,62501320)、山西省基础研究计划(批准号:202103021223388)、江苏省双创团队(批准号:JSSCTD202351)、苏州市科技计划(批准号:SYG2024003)、内蒙古大学实验技术研究项目(批准号:SYJS2025004)和山西工程技术学院科技项目(批准号:2021QD-15)资助的课题. Project supported by the National Natural Science Foundation of China(Grant Nos.U23A20349,62501320),the Fundamental Research Program of Shanxi Province,China(Grant No.202103021223388),the Jiangsu Provincial Team of Innovation and Entrepreneurship,China(Grant No.JSSCTD202351),the Key Technology Project of Suzhou City,China(Grant No.SYG2024003),the Inner Mongolia University Experimental Technology Research Project in 2025,China(Grant No.SYJS2025004),and the Science and Technology Project of Shanxi Institute of Technology,China(Grant No.2021QD-15).
评论