溅射功率密度对TiO2薄膜结晶特性的多物理场仿真分析OA

The crystal structure of TiO2 films is a key factor in determining their core properties,such as their photo-catalytic and optical performance.Meanwhile,sputtering power density indirectly influences the crystallization behaviour of films by regulating the deposition temperature.In this study,a quantitative model relating sputtering power density and deposition temperature was established,and a multi-physics simulation method was used to thoroughly investigate the regulation mechanism of sputtering power den-sity on the crystallization behavior of TiO2 films.Simulation results show that when the sputtering power density increases from 0.83 W/cm² to 5.00 W/cm²,the surface temperature of the film during growth rises from 197℃to 541℃,and the substrate temperature rises from 125℃to 324℃,with the surface temperature always higher than the substrate(temperature difference 72-217℃).When the surface tem-perature of the growing film is below 400℃,it is in an amorphous state;above 400℃,it transforms into the anatase phase,and the film's crystalline structure is mainly determined by the growth surface tempera-ture.This simulation work clarifies the critical role of temperature in the phase transformation of TiO2 films,provides a theoretical basis for precise control of film crystal structures,and has significant implica-tions for the industrial application of high-performance TiO2 films.