高功率极低发散角976 nm单模半导体激光器OA

Erbium-doped fiber amplifiers(EDFAs)serve as key component of high-capacity,all-optical communi-cation networks,relying critically on high-power,single-mode diode laser pumping sources to achieve efficient opti-cal signal amplification.This paper reports a high-power 976 nm single-mode diode laser chip.The device utilizes an asymmetric Bragg reflector waveguide epitaxial structure,achieving an ultra-low far-field divergence angle and a nearly circular beam profile.Experimental results demonstrate a maximum continuous-wave(CW)output power ex-ceeding 1.5 W for the laser,limited by thermal saturation.The kink-free output power reaches 0.83 W at an injec-tion current of 1.2 A.At this operating current,the vertical and lateral divergence angles containing 95％power are measured at 13.70°and 10.95°respectively.The laser emits at a peak wavelength of 976.16 nm with a narrow spec-tral width of 0.11 nm(at-3 dB)and a side-mode suppression ratio(SMSR)of 40 dB.The far-field distribution remains stable by varying heat-sink temperature and current.Even under thermal saturation,the vertical divergence angle(defined at 95％power containment)stays below 16°.Owing to its high output power,circular symmetry,and narrow spectral characteristics,this laser chip is conducive to the development of low-cost,high-power single-mode pump modules for EDFAs.