基于免抛光钙钛矿单晶的自驱动光电探测器OA

Traditional perovskite single-crystal optoelectronic devices typically rely on mechanical polishing to achieve flat interfaces.However,this process inevitably introduces severe lattice damage and deep-level defects,leading to increased dark current and significantly heightened noise in the devices,which severely limits their perfor-mance.To address these issues,this paper proposes a silicon wafer-assisted seed-reverse-temperature crystallization growth strategy.By leveraging the atomically flat surface of silicon wafers to regulate nucleation and growth behavior,it successfully achieves controlled growth of high-quality perovskite single crystals,directly yielding flat,growth-tex-ture-free native surfaces.Self-driven photodetectors were constructed using gold/silver asymmetric electrodes,sys-tematically investigating photoresponse characteristics under visible light and X-ray irradiation with both front and back illumination.At 0 V bias,the device exhibited a low dark current of 0.014 5 nA,a high on/off ratio of 196 un-der 500 nm front illumination,and a maximum responsivity of 2.44 mA·W-1.When light was incident from the rear,the response shifted from broadband to narrowband.X-ray testing revealed a sensitivity of 3 487 μC·Gyair-1·cm-2 at 0 V bias,with a detection limit as low as 21.99 nGyair·s-1.This study provides a simple polishing-free approach for constructing high-quality perovskite single-crystal interfaces,offering a novel technological pathway for developing ultra-sensitive,low-cost perovskite single-crystal photodetectors.