BiCMOS与SOI工艺运算放大器的辐射敏感特性对比研究OA

Focusing on the reliability issues of operational amplifiers in radiation environments,a systematic study is conducted on the radiation sensitivity characteristics of BiCMOS and SOI process operational amplifiers through pulsed laser single particle effect test platform and 60Co total ionizing dose irradiation test platform.In terms of single event transient(SET)sensitivity:the input stage SET threshold of the BiCMOS process operational amplifier is about 0.17 nJ,and its output pulse signal is related to the carrier migration mechanism;the SOI process operational amplifier,with its complementary differential structure,has a high SET threshold(0.47 nJ)for the input stage,but its buried oxide layer causes abnormal sensitivity between the intermediate and output stages(threshold as low as 0.02 nJ).In addition,the Miller capacitor in the BiCMOS operational amplifier introduces a low-pass filtering effect,resulting in SET pulse broadening and oscillation.In terms of total ionizing dose(TID)sensitivity:the BiCMOS process operational amplifier mainly exhibits bipolar transistor gain degradation and significant open-loop gain degradation(up to 21.3 dB);the SOI process operational amplifier experiences a sharp increase in input bias current(up to 120.4 nA)due to the accumulation of the buried oxide layer charges,while the gain degradation is relatively moderate.This study reveals the degradation laws and physical mechanisms of BiCMOS and SOI operational amplifiers under SET and TID effects,providing important experimental evidence for the process selection and hardening design of radiation-hardened integrated circuits intended for space and nuclear environments.