包含积累层沟道和4H-SiC/Si异质结集电区的SiC基RC-IGBTOA

A silicon carbide enhancement-mode reverse-conducting insulated gate bipolar transistor integrating a heterojunction collector(HJC)and an accumulation layer channel(HJC-RC-ACCUIGBT)is devised.Instead of an inversion layer channel,an accumulation layer channel is adopted to enhance the channel mobility,thereby reducing the threshold voltage,specific on-resistance,and the adverse effects of gate oxide/channel interface states.A 4H-SiC/Si/4H-SiC HJC is employed in place of an n+4H-SiC homogeneous collector to block electron outflow,enhance conductance modulation,reduce the forward voltage drop,and eliminate the snapback phenomenon without compromising other electrical characteristics.The device's structure,as well as its static and dynamic electrical characteristics are simulated and optimized using TCAD software.The results show that,compared to a reference device with an inversion layer channel,this IGBT exhibits a 15％reduction in threshold voltage,a 32％increase in collector saturation current density,and a mitigated influence from gate oxide/channel interface states.Compared to a reference device without an HJC,this IGBT completely eliminates the snapback phenomenon,with the forward and reverse voltage drops reduced by 72％and 12％,respectively.The interface states of the HJC have no significant effect on the device's electrical characteristics.