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混合集成电路用AlN-AMB基板电容焊接可靠性研究OA

Soldering Reliability of Capacitors on AlN-AMB Substrates for Hybrid Integrated Circuits

中文摘要英文摘要

基于有限元法建立热机械耦合模型,系统研究陶瓷基板材料、焊盘几何参数、导体布局方式、覆铜区域分布及陶瓷基板厚度等因素对电容根部应力的影响规律.研究结果表明,与直接覆铜Al2O3(Al2O3-DBC)基板相比,AlN陶瓷与BaTiO3电容之间更大的热膨胀系数(CTE)差异是导致活性金属钎焊覆铜AlN(AlN-AMB)基板电容根部应力增大56.8%的关键因素.通过优化电容焊盘尺寸,电容根部应力可降低40.5%;此外,通过合理布局导体及覆铜区域位置关系,可有效降低电容根部所受应力.揭示的应力影响规律与提出的优化设计方法为高可靠性混合集成电路的AlN-AMB基板设计提供理论支撑.

Based on the finite element simulation method,a thermo-mechanical coupling model is established to systematically investigate the influence of ceramic substrate material,pad geometric parameters,conductor layout pattern,distribution of copper-clad regions,and ceramic substrate thickness on the root stress of the soldered capacitor.The research results indicate that,compared with the Al2O3 direct-bonded copper(Al2O3-DBC)substrate,the larger coefficient of thermal expansion(CTE)mismatch between the AlN ceramic and the BaTiO3 capacitor is the key factor leading to a 56.8%increase in the root stress of the capacitor soldered on the AlN active-metal-brazed copper(AlN-AMB)substrate.By optimizing the pad dimensions of the capacitor,the root stress of the capacitor is reduced by 40.5%.Moreover,through the rational layout of conductor traces and the positional relationship of copper-clad regions,the stress at the capacitor root is effectively mitigated.The revealed influence laws of stress and the proposed optimization design method provide theoretical support for the design of AlN-AMB substrates for high-reliability hybrid integrated circuits.

董晓伟;董布克;王睿;赵斯阳

中国电子科技集团公司第四十三研究所,合肥 230088||安徽省微系统重点实验室,合肥 230088中国电子科技集团公司第四十三研究所,合肥 230088中国电子科技集团公司第四十三研究所,合肥 230088中国电子科技集团公司第四十三研究所,合肥 230088

信息技术与安全科学

热机械应力有限元分析可靠性优化

thermo-mechanical stressfinite element analysisreliability optimization

《电子与封装》 2026 (6)

1-7,7

安徽省科技创新攻坚计划(202423i08050002)

10.16257/j.cnki.1681-1070.2026.0067

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