烧结降温速率对ZnO压敏陶瓷电性能的影响OA

Zinc oxide(ZnO)varistor ceramics are the core components of metal oxide surge arresters.The performance parameters of ZnO resistor chips,such as residual voltage ratio,potential gradient,and leakage current,are directly related to the protective,reliable,and lightweight characteristics of the ar-rester.By controlling the cooling rate of ZnO resistor chips during sintering process within the tempera-ture range of 900℃ to 400℃,the coordinated optimization of residual voltage ratio,potential gradient,and leakage current was achieved.Through broad-band dielectric spectroscopy,it was found that the intrinsic point defect concentration increases with the increase in cooling rate,and the increase in zinc in-terstitial defect concentration is more significant compared to the increase in oxygen vacancy defect con-centration.By decoupling the influencing factors of residual voltage ratio and potential gradient,it was found that the change in residual voltage ratio of ZnO resistor chips is mainly affected by the cooling rate,while the change in potential gradient is mainly affected by the highest sintering temperature.This study provides new insights and sufficient experimental evidence for the synergistic optimization of the small current performance and the high current impact performance of ZnO resistor chips.