沉积气压调控氰酸酯表面Cu膜性能研究OA
Effects of Deposition Pressure on Cu Film Properties for Cyanate Ester Composites
目的 采用磁过滤电弧离子镀技术在氰酸酯复材表面沉积 Cu 膜,并探究沉积气压对氰酸酯复材表面Cu 膜结构与性能的影响规律与作用机理,优选出最佳沉积气压.方法 采用磁过滤电弧离子镀技术分别在0.10、0.30、0.50、0.70 和 0.90 Pa 沉积气压下制备 Cu 膜,通过检测 Cu 膜的表面形貌、微观结构、成分及元素含量,探究沉积气压对薄膜晶粒尺寸、择优取向、化学元素成分等薄膜微观状态的影响规律,并结合Cu 膜的电阻率及结合力,分析讨论 Cu膜的微观状态对其宏观电学性能与结合强度的影响.结果 随着沉积气压由0.10 Pa 升高至 0.90 Pa,Cu 膜晶粒尺寸呈先增大后减小的趋势,薄膜纯度下降、织构由(200)转化为(111).薄膜电阻率在低沉积气压下变化较小,基本维持在 1.7×10-8 Ω·m左右,超过0.50 Pa时受氧化物生成、晶界散射增加、取向转变等因素影响,电阻率明显升高,沉积气压为 0.90 Pa 时,电阻率升至 7.7×10-8 Ω·m.Cu 膜/氰酸酯复材界面处化学键对结合强度影响显著,界面处 C—O、C==O 等含氧化学键的增加及 CuO 的生成有助于提升界面结合强度,沉积气压为 0.50~0.70 Pa 时,结合性能最佳,约为 3 MPa.结论 沉积气压对 Cu 膜微观状态及宏观性能调控作用显著,沉积气压为 0.50 Pa 时,薄膜具有高导电性、高结合强度等最佳的综合性能.
Cyanate ester resin composites reinforced with quartz fibers(cyanate ester composites)exhibit high heat resistance,low water absorption,high strength,and superior dielectric properties,making them an ideal aerospace material.Surface metallization of cyanate ester composites can provide them with good electrical and magnetic conductivity without altering their excellent properties,better meeting functional applications in the aerospace field such as electromagnetic shielding of aircraft fuselages.Magnetic-filtered cathodic arc ion plating technology has the advantages of high ionization rate,high particle impact energy,strong adhesion strength,and precise controllability of film thickness,making it an effective method for the surface metallization of cyanate ester composites.Film deposition is a kinetic process where deposition pressure effectively modulates the kinetic impact of particles during the deposition.This alters the growth behavior of deposition,enabling precise control over the microstructure of Cu films,including grain size,crystallographic texture,and defects,thereby affecting their macroscopic properties.The work aims to adopt the magnetic-filtered cathodic arc ion plating technology to prepare Cu films on the surface of cyanate ester composites under deposition pressures of 0.10,0.30,0.50,0.70 and 0.90 Pa,in order to investigate the effect of deposition pressure on the structure and properties of the Cu films.Micromorphology and microstructure,including grain size,crystallographic texture,and chemical composition.were characterized through scanning electron microscope(SEM),atomic force microscope(AFM),X-ray Diffraction(XRD),and energy dispersive X-ray Spectroscopy(EDS).Furthermore,electrical resistivity and adhesion strength were evaluated via four-probe resistance measurements and tensile testing to analyze the correlation between structure and properties.To better analyze the interfacial bonding mechanism,SEM and X-ray photoelectron spectroscopy(XPS)were also used to examine the morphology and chemical bonds at the Cu film/cyanate ester composite interface.As the deposition pressure increased from 0.10 to 0.90 Pa,the grain size initially increased and then decreased,reaching a maximum of 67 nm at 0.50 Pa.while the smallest grain size of 11 nm was observed at 0.90 Pa,accompanied by numerous intergranular voids.Residual impurity gases inside the composite and vacuum chamber distributed along film defects,leading to lower purity.Additionally,at low pressures,the Cu film exhibited(200)texture.As deposition pressure increased to 0.90 Pa,the increase collision resulted in reduced particle energy and restricted diffusion,driving force for the growth of(111)oriented grains with the lowest surface free energy.The resistivity exhibited minimal variation at low deposition pressures,remaining around 1.7×10-8 Ω·m.When the pressure exceeded 0.50 Pa,resistivity increased significantly due to oxide formation,enhancing grain boundary scattering,and crystallographic texture transformations.At a deposition gas pressure of 0.90 Pa,the resistivity increased to 7.7×10-8 Ω·m.Chemical bonds at the Cu film/cyanate ester composite interface significantly affected bonding strength.Increased oxygen-containing bonds(such as C—O,C==O)and CuO formation at the interface enhanced adhesion strength.Optimal adhesion performance(approximately 3 MPa)was achieved at a deposition pressure of 0.50 Pa and 0.70 Pa.Deposition pressure significantly regulates the microstructure and properties of the Cu film.At a deposition pressure of 0.50 Pa,the film exhibits the optimal comprehensive performance.
张悦;唐德礼;陈美艳;刘旋;钟利;姚可;金凡亚
核工业西南物理研究院,成都 610207核工业西南物理研究院,成都 610207核工业西南物理研究院,成都 610207核工业西南物理研究院,成都 610207核工业西南物理研究院,成都 610207核工业西南物理研究院,成都 610207核工业西南物理研究院,成都 610207
通用工业技术
磁过滤电弧离子镀沉积气压氰酸酯微观结构电学性能结合强度
magnetic-filtered cathodic arc ion platingdeposition pressurecyanate estermicrostructureelectrical resistivityadhesion strength
《表面技术》 2026 (12)
245-255,11
西物创新行动项目(202301XWCX003)中核集团青年英才项目(2023JZYF-01) SWIP Innovation Action Program(202301XWCX003)CNNC Young Talent Program(2023JZYF-01)
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