Coupling of inherently charged InAs/GaAs quantum dots and micropillar cavity modesOA
Coupling of inherently charged InAs/GaAs quantum dots and micropillar cavity modes
Qiaozhi Zhang;Yingqiang Xu;Haiqiao Ni;Zhichuan Niu;Hanqing Liu;Sihao Su;Xiangjun Shang;Xiangbin Su;Donghai Wu;Chengao Yang;Dongwei Jiang;Yu Zhang
State Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,ChinaState Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China||Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
δ-dopingcavity modemicropillarInAs/GaAs quantum dots
δ-dopingcavity modemicropillarInAs/GaAs quantum dots
《半导体学报（英文版）》 2026 (6)
135-139,5
This research work was funded by the National Natural Sci-ence Foundation of China(Grant Nos.62035017,12494600,12494601,12494602),the Chinese Academy of Sciences Project for Young Scientists in Basic Research(Grant No.YSBR-112),the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0300801),the Key Research and Development Projects of Shanxi Province(Grant Nos.202102030201004,202201030201009),the Sci-ence and Technology Program of Guangzhou(Grant No.202103030001),the Postdoctoral Fellowship Program(GradeB)of China Postdoctoral Science Foundation(Grant No.GZB20240719).
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