Direct growth of high-quality GaN on single-crystal AlN substrate and related thermal characterizationOA
Direct growth of high-quality GaN on single-crystal AlN substrate and related thermal characterization
Yinghao Chen;Hongcai Li;Genhao Liang;Zhengguang Fang;Jun Zhang;Kai Wang;Jiayu Dai;Xiaoxiang Yu;Lishan Zhao
College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,ChinaCollege of Science,National University of Defense Technology,Changsha 410073,ChinaCollege of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,ChinaCollege of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,ChinaCollege of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,ChinaHunan Institute of Advanced Technology,Changsha 410205,ChinaCollege of Science,National University of Defense Technology,Changsha 410073,ChinaCollege of Science,National University of Defense Technology,Changsha 410073,ChinaCollege of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,China
single-crystal AlN substrateGaN/AlN heterostructurebroadband frequency domain thermoreflectancethermal properties
single-crystal AlN substrateGaN/AlN heterostructurebroadband frequency domain thermoreflectancethermal properties
《半导体学报（英文版）》 2026 (6)
119-127,9
This work is supported by the Innovation Research Founda-tion of National University of Defense Technology,P.R.China,with the Grant No.24-ZZCX-ZXGC-01.
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