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基于导通电阻测量的SiC MOSFET结温在线监测方法OA

Online Monitoring Method for SiC MOSFET Junction Temperature Based on Turn-on Resistors Measurement

中文摘要英文摘要

结温是碳化硅功率器件(SiC MOSFET)健康状态的关键指标,结温在线监测是状态监测、健康管理和寿命预测的重要基础.基于中高压SiC MOSFET的静态热敏电参量——导通电阻,展开其结温在线监测的研究.首先,分析了导通电阻与结温的相关性;其次,对导通压降在线测量电路的工作原理和参数设计进行了理论分析、仿真与实验验证.最后,基于双脉冲实验,离线校准SiC MOSFET结温、导通电阻和负载电流的模型;搭建BUCK变换器平台,在两种不同的工况下,验证了所提结温在线测量方案的可行性与适用性.

Junction temperature is a key indicator of the health status of SiC MOSFET,and real-time monitoring of junction temperature is an important foundation for condition monitoring,health management and lifetime prediction.The real-time monitoring of junction temperature was investigated based on the on-resistance,a static thermal parameter of medium and high-voltage SiC MOSFETs.Firstly,the correlation between on-resistance and junction temperature was analysed.Secondly,the theoretical analysis,simulation and experimental verification of the working principle and parameter design of the online measurement circuit of turn-on voltage drop were carried out.Finally,the models of junction temperature,on-resistance and load current of SiC MOSFETs were calibrated offline based on the double-pulse experiment.A BUCK converter platform was built to verify the feasibility and applicability of the proposed junction temperature online measurement scheme under two different working conditions.

田家辉;齐晓光;赵凯林;徐田丰;陈月清;李林璟

国网河北省电力有限公司经济技术研究院,河北 石家庄 050000国网河北省电力有限公司经济技术研究院,河北 石家庄 050000国网河北省电力有限公司经济技术研究院,河北 石家庄 050000国网河北省电力有限公司经济技术研究院,河北 石家庄 050000北京交通大学 电气工程学院,北京 100044北京交通大学 电气工程学院,北京 100044

信息技术与安全科学

导通压降碳化硅功率器件结温监测热敏电参量

turn-on voltage dropSiC MOSFETjunction temperature monitoringtemperature sensitive electrical parameters(TSEP)

《电气传动》 2026 (6)

32-40,9

国网河北省电力有限公司科技项目(SGHEJY00GHJS2310075)

10.19457/j.1001-2095.dqcd26584

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