二维半导体晶体管与集成电路研究进展OA
Progress of two-dimensional semiconductor transistors and integrated circuits
二维半导体以其原子级厚度、表面光滑无悬挂键以及对短沟道效应的抑制能力,被国际器件与系统路线图确立为未来亚纳米节点的关键候选材料.围绕二维半导体从基础材料科学到系统级集成的全链条发展现状,分析了二维半导体相较于传统硅基材料的本征物理优势与制备工艺进展,重点评述了二维半导体晶体管接触电阻工程、栅介质集成、器件架构演进等核心工艺模块的最新进展与技术瓶颈.详细追溯了从早期单晶体管验证到较大规模集成电路的发展脉络,分析了集成过程中的材料-工艺-设计协同挑战,并进一步探讨了未来二维半导体在感存算一体、神经形态计算及异质集成等新兴范式中的独特潜力.
Two-dimensional semiconductors are identified by the international roadmap for devices and systems as key candidate materials for future sub-nm nodes,owing to their atomic-scale thickness,smooth surface without dangling bonds and capability to suppress short-channel effects.Focusing on the current status of the full-chain development of two-dimensional semiconductors from basic materials science to system-level integration,the intrinsic physical advantages over traditional silicon-based materials and the progress in preparation processes were systematically analyzed.The latest progress and technical bottlenecks of core process modules including contact resistance engineering,gate dielectric integration and device architecture evolution of two-dimensional semiconductor transistors were reviewed in detail.Meanwhile,the development trajectory from early single-transistor verification to large-scale integrated circuits was traced comprehensively,and the collaborative challenges among materials,processes and design during the integration process were analyzed.The unique potential of two-dimensional semiconductors in emerging paradigms such as in-memory sensing and computing,neuromorphic computing and van der Waals heterogeneous integration is further discussed.
丁荣祥;文澜;张宇凯;朱梦剑
国防科技大学前沿交叉学科学院新型纳米光电信息材料与器件湖南省重点实验室,湖南长沙 410073国防科技大学前沿交叉学科学院新型纳米光电信息材料与器件湖南省重点实验室,湖南长沙 410073国防科技大学前沿交叉学科学院新型纳米光电信息材料与器件湖南省重点实验室,湖南长沙 410073国防科技大学前沿交叉学科学院新型纳米光电信息材料与器件湖南省重点实验室,湖南长沙 410073
信息技术与安全科学
二维半导体化学气相沉积晶体管集成电路范德华异质集成感存算一体
two-dimensional semiconductorschemical vapor depositiontransistorsintegrated circuitsvan der Waals heterogeneous integrationin-memory sensing and computing
《国防科技大学学报》 2026 (3)
162-181,20
国家自然科学基金面上基金资助项目(12174444)
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