Ho:BaF2晶体在近红外-中红外波段光谱性能分析OA

Infrared lasers in the 1-3 μm region are increasingly important for applications in medical treatment,atmospheric monitoring,and high-power laser systems.Holmium ions(Ho3+)are particularly attractive because of their multiple emission channels covering near to mid infrared ranges.This work aims to systematically evaluate the structural and spectroscopic properties of Ho:BaF2 crystals and determine the optimal doping concentrations for efficient multi-band laser operation.High-quality Ho:BaF2 single crystals with concentrations of 0.5%-3.0%(in atom)were grown using the temperature gradient technique(TGT).Structural characterization was performed,while spectroscopic properties were analyzed via absorption,fluorescence,and lifetime measurements.Judd-Ofelt analysis was further applied to calculate radiative parameters.All samples exhibited cubic structures,with doping segregation ratios close to unity and uniform Ho3+distribution.Spectroscopic evaluation revealed optimal doping concentrations of 2.0%(in atom)for～1.2 μm(5I6→5I8,spectral quality factor Q=24.29×10-21 cm2·ms)and～2.05 μm(5I7→5I8,Q=67.53×10-21 cm2·ms),and 1.0%(in atom)for～2.85 μm(5I6→5I7,Q=44.52×10-21 cm2·ms).BaF2 host,with its low phonon energy(～346 cm-1)and anti-clustering characteristics,enabled enhanced emission performance,including a maximum emission cross-section of 3.81×10-21 cm2 at～2.05 μm.These results outperform traditional hosts such as YAG and CaF2.Compared to oxide hosts,BaF2 offers superior lifetime,reduced non-radiative losses,and greater resistance to concentration quenching.The findings indicate that Ho:BaF2 supports higher effective doping levels,making it particularly promising for high-power and ultrafast laser applications.Ho:BaF2 crystals demonstrate excellent potential as efficient,multi-wavelength infrared laser gain media.