双层ZnO量子点界面势垒调控的忆阻器及其突触可塑性OA
Memristor with Interfacial Barrier Modulation by Bilayer ZnO Quantum Dots and Its Synaptic Plasticity
针对传统忆阻器中导电细丝随机形成,导致开关行为不可靠的问题,研制了一种基于极简对称结构的双层氧化锌量子点界面忆阻器.以双量子点界面为核心调控单元,通过构建可调的界面势垒,利用局域电场增强和电子俘获效应引导氧空位轨道化定向迁移,从而实现稳定、可预测的电阻开关.结果表明:该忆阻器展现出约 103 的开关窗口、超过 107 次的耐久性、超过 106 s 的数据保持能力以及可控的多级电导特性,并成功模拟了脉冲时序依赖可塑性等关键突触功能.进一步分析表明,量子点双层界面工程在简化材料体系下,实现了对缺陷动力学与势垒演化的可控调制,其界面电势弛豫特征时间 τ约为 7.97×103 s、弛豫指数 β约为 0.7.
To address the unreliable switching behavior in conventional memristors caused by the random formation of conductive filaments,a bilayer ZnO quantum dot(QD)interfacial memristor with a minimalist symmetric structure was proposed and fabricated.The device employs a dual-QD interface as the core modulation unit,where a tunable interfacial barrier was constructed.By utilizing localized electric field enhancement and electron trapping effects,the orbital-oriented migration of oxygen vacancies was guided,enabling stable and predictable resistive switching.The results show that the memristor exhibits an ON/OFF ratio of approximately 103,endurance exceeding 107 cycles,data retention longer than 106 s,and controllable multilevel conductance.Moreover,key synaptic functions,such as spike-timing-dependent plasticity,were successfully emulated.Further analysis reveals that the bilayer QD interface engineering enables controllable modulation of defect dynamics and barrier evolution within a simplified material system.The interfacial potential relaxation is characterized by a time constant τ of approximately 7.97×103 s and a relaxation exponent β of about 0.7.
姜智文;于秋红;李小红
河南科技大学 物理工程学院,河南 洛阳 471023河南科技大学 物理工程学院,河南 洛阳 471023河南科技大学 物理工程学院,河南 洛阳 471023
通用工业技术
忆阻器量子点界面界面工程氧空位迁移突触可塑性神经形态计算
memristorquantum dot interfaceinterface engineeringoxygen vacancy migrationsynaptic plasticityneuromorphic computing
《河南科技大学学报（自然科学版）》 2026 (3)
37-45,53,10
国家自然科学基金项目(52302173)中国博士后科学基金项目(2024T170237)
评论