InAs/GaSb Ⅱ类超晶格长波焦平面红外探测器应力适应性研究OA

The superlattice long-wavelength infrared focal plane detectors operate at low temperatures.The differences in the thermal expansion coefficients among the various material layers of the detectors can lead to deformation and gen-erate thermal stress,which in turn affects the optoelectrical performance of the detector.This study designed two struc-tural modules to achieve the regulation of stress in the superlattice detectors.The changes in the dark current and spec-tral response of InAs/GaSb type Ⅱ superlattice long-wave infrared focal plane detectors under different stress conditions were explored.The research indicates that within the stress range of-10.7 MPa to 131.9 MPa,the variation in the opto-electrical performance of the detector is small.The detector was subjected to a temperature shock test,and it demon-strated high reliability.The research results provide guidance for the structural design of InAs/GaSb type Ⅱ superlattice long-wave infrared focal plane detectors and offer a basis for their performance and reliability assessment.