InAs/GaSb Ⅱ类超晶格电学特性的研究OA
Research on the electrical properties of InAs/GaSb type-Ⅱ superlattices
为了研究InAs/GaSb Ⅱ类超晶格的电学特性,在GaSb衬底与InAs/GaSb Ⅱ类超晶格外延材料之间生长了一层晶格匹配的AlAsSb电学隔离层,抑制了衬底的导电效应.通过变温霍尔测试结果表明,未掺杂的超晶格呈现N型导电.随着P型掺杂浓度的增加,出现了补偿掺杂现象,并且在95 K和230 K分别发生了导电类型的转变.转变温度以下呈现P型导电,而转变温度以上则转为N型导电.通过费米能级模型对该现象进行了分析,结果表明,导电类型转变的温度随着掺杂浓度的增加而升高.
In order to investigate the electrical properties of InAs/GaSb type-Ⅱ superlattices,a lattice-matched AlAsSb electrical isolation layer was grown between the GaSb substrate and the InAs/GaSb type-Ⅱ superlattice epitaxial material to suppress the conductive effect of the substrate.Temperature-dependent Hall measurements revealed that the uninten-tionally doped superlattice exhibited N-type conductivity.As the P-type doping concentration increased,a carrier com-pensation was observed,with the conductivity type reversal occurring at 95 K and 230 K.Below the transition tempera-tures,P-type conductivity was exhibited,while above the transition temperatures,the material exhibited N-type conduc-tivity.The phenomenon was analyzed using the Fermi level model,and the results indicated that the transition tempera-ture for the conductivity type change increased with increasing doping concentration.
向泰毅;王楠;黄敏;柴旭良;陈建新
上海科技大学 信息科学技术学院,上海 201210||中国科学院上海技术物理研究所 红外探测全国重点实验室,上海 200083中国科学院上海技术物理研究所 红外探测全国重点实验室,上海 200083中国科学院上海技术物理研究所 红外探测全国重点实验室,上海 200083中国科学院上海技术物理研究所 红外探测全国重点实验室,上海 200083上海科技大学 信息科学技术学院,上海 201210||中国科学院上海技术物理研究所 红外探测全国重点实验室,上海 200083
数理科学
分子束外延InAs/GaSb Ⅱ类超晶格霍尔效应X射线衍射
molecular beam epitaxyInAs/GaSb type-Ⅱ superlatticeHall effectX-ray diffraction
《红外与毫米波学报》 2026 (2)
243-249,7
国家自然科学基金青年科学基金项目(62104236) Supported by the Young Scientists Fund of the National Natural Science Foundation of China(62104236)
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