面向光场调控的像素级红外超构透镜阵列设计与制备OA
Design and fabrication of pixel-level infrared metalens arrays for light field control
超构透镜凭借其独特的光场调控特性以及高度集成化、小型化的显著优势,在轻小型光电芯片一体化成像系统中具有广阔的应用前景.文中设计了面向像素级集成红外焦平面应用的超构透镜结构,采用步进式光刻技术与电感耦合等离子体(ICP)刻蚀工艺相结合的制备方法,通过对气体流量、工作压强、功率等刻蚀参数系统优化有效地抑制了负载效应,将刻蚀速率的标准差从0.205%降到了0.073%,并制备了面阵规模为640×512、像素中心距为30 μm、Si柱最大深宽比为3.42:1的高均匀性超构透镜阵列,对4.3 μm波长红外光的汇聚焦距为35 μm,焦距处中心区域10 μm和20 μm径向范围内测得的光场汇聚效率分别为66.4%和84.9%,光场能量较相同面积范围内未集成超构透镜时分别提升了5.98倍和1.91倍.该研究为像素级超构透镜阵列集成红外芯片提供了结构设计与工艺基础.
Metalenses,with their unique optical field modulation characteristics and remarkable advantages of high inte-gration and miniaturization,have broad applications in the integrated imaging system of lightweight and small-sized op-toelectronic chips.In this paper,a metalens structure for pixel-level integrated infrared focal plane applications was de-signed.The preparation method combining stepper lithography technology and the Inductively Coupled Plasma(ICP)etching process was adopted.Through systematic optimization of etching parameters,such as gas flow rate,working pressure and power,the loading effect was effectively suppressed and the standard deviation of the etching rate was decreased from 0.205%to 0.073%.Finally,a highly uniform metalens array was fabricated,with a pixel center distance of 30 μm,an array of 640×512,and a maximum aspect ratio of 3.42 of Si pillars.The focusing distance for 4.3 μm wavelength infrared light is 35 μm.The measured optical field convergence efficiencies,within radial ranges of 10 μm and 20 μm in the central area at the focal length,are 66.4%and 84.9%,respectively.The optical field energy is increased by 5.98 times and 1.91 times,respectively,compared with that without the integrated metalens within the same area range.This study will provide the structural design and processing foundation for the integration of pixel-level metalens arrays with infrared chips.
张风;王芳芳;周建;应翔霄;周易;陈建新
上海理工大学,上海 200433||中国科学院上海技术物理研究所,上海 200083中国科学院上海技术物理研究所,上海 200083中国科学院上海技术物理研究所,上海 200083中国科学院上海技术物理研究所,上海 200083上海理工大学,上海 200433||中国科学院上海技术物理研究所,上海 200083||国科大杭州高等研究院 物理与光电工程学院,浙江 杭州 310024中国科学院上海技术物理研究所,上海 200083||国科大杭州高等研究院 物理与光电工程学院,浙江 杭州 310024
数理科学
超构透镜全介质负载效应刻蚀均匀性光汇聚效率
metalensesall-dielectricloading effectetching uniformitylight convergence efficiency
《红外与毫米波学报》 2026 (2)
207-216,10
国家自然科学基金(U24A20294、62335017、62222412、62104236、62104237)国家重点研发计划(2022YFB3404405)中国科学院先导项目(XDB0980000)中国科学院青年创新促进会项目(Y202057)上海市扬帆计划项目(22YF1455800、21YF1455000)上海市自然科学基金项目(23ZR1473500、23ZR1473100)中国科学院上海技术物理研究所创新专项(CX-513、CX-512、CX-508、CX-567)中国博士后科学基金资助项目(2024M75687)红外探测技术国家重点实验室(IRDT-23-01) Supported by the National Natural Science Foundation of China(U24A20294,62335017,62222412,62104236,62104237)the National Key Research and Development Program of China(2022YFB3404405)the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB0980000)the Youth Innovation Promotion Association,CAS(Y202057)the Shanghai Sailing Program(22YF1455800,21YF1455000)the Shanghai Natural Science Foundation Program(23ZR1473500,23ZR1473100)the Special Innovation Program of Shanghai In-stitute of Technical Physics,Chinese Academy of Sciences(CX-513,CX-512,CX-508,CX-567)the China Postdoctoral Science Foundation(2024M750687)the National Key Laboratory of Infrared Detection Technologies(IRDT-23-01) 本文的光刻和刻蚀工艺是在上海科技大学材料器件中心(SMDL20191219)的支持下开展的,作者在此表示衷心的感谢.
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