InAs/GaInSb长波红外超晶格材料外延生长研究OA

InAs/GaInSb type-Ⅱ superlattice(T2SL)materials exhibit significant advantages in long-wave(LWIR)and very long-wave infrared(VLWIR)detectors.By optimizing molecular beam epitaxy(MBE)growth parameters and in-terface control techniques,a 50-period short-period superlattice(SL)structure composed of 10 monolayer(ML)InAs/7 ML Ga0.75In0.25Sb was successfully grown at the GaSb reconstruction transition temperature.High-resolution X-ray dif-fraction(HRXRD)characterization revealed a lattice constant of 6.108 Å and a period thickness of 53.53 Å for the su-perlattice,with deviations from theoretical design values below 0.2%.The lattice mismatch with the GaSb substrate was only 0.197%.Atomic force microscopy(AFM)measurements demonstrated a root mean square(RMS)surface roughness of 1.67 Å,while photoluminescence(PL)spectroscopy indicated a bandgap of 89.9 meV.Furthermore,a 12 ML InAs/5 ML Al0.8In0.2Sb superlattice barrier material was epitaxially grown,exhibiting a lattice mismatch of 0.067%with the GaSb substrate.Experimental results confirm that both 10 ML InAs/7 ML Ga0.75In0.25Sb and 12 ML InAs/5 ML Al0.8In0.2Sb superlattices exhibit excellent lattice compatibility with the GaSb substrate.The presence of mul-tiple satellite diffraction peaks and superior interface quality further validate the structural integrity of the materials.These findings provide a critical material foundation for the development of high-performance infrared detectors.