高压诱导YbMnBi2磁性转变的电输运研究OA

In this work,we performed systematic high-pressure electrical transport and Raman spectroscopy measurements on the topological semimetal YbMnBi2.The transport results reveal a pronounced evolution of the resistivity-temperature behavior with increasing pressure.A negative magnetoresistance emerges above 16.8 GPa,and a clear anomalous Hall effect characterized by a hysteretic Hall resistivity loop is observed at higher pressures around 30.1 GPa.These transport anomalies,together with the continuous evolution of the Raman spectra in the corresponding pressure range,indicate the formation of a pressure-induced magnetic ordered state with a net magnetic moment component.By systematically analyzing the pressure-dependent evolution of the resistivity-temperature characteristics,magnetoresistance behavior,and Hall effect,this work demonstrates the cooperative tuning of magnetic ordering and topological electronic states in YbMnBi2 under pressure.Our results provide new experimental insight into pressure-controlled magnetic and transport properties in topological semimetals and highlight their potential relevance for spin-related electronic applications.