基于金属有机框架热解的Co掺杂TiO2的制备及其光催化性能OA

Semiconductor doping can promote the photoelectrocatalytic application of semiconductor materials by constructing impurity energy levels and reducing the band gap.In this paper,we designed a preparation method for metal-doped semiconductor materials.The transition metal Co was combined with the anionic ligand of the metal-organic framework(MOF)MIL-125 through coordination.Then,the Co-doped TiO2 was obtained through pyrolysis,and its performance in photocatalysis was studied.The results showed that the co-doped TiO2 exhibits a high photocurrent density(9.87 μA/cm2),which is 3.8 times of the undoped TiO2.Meanwhile,the degradation reaction rate constant also significantly increases from 0.041 min⁻¹ before doping to 0.063 min⁻¹ after doping.The incorporation of Co species not only extends the visible-light absorption edge of TiO2 but also introduces well-defined impurity energy levels within its bandgap,thereby facilitating efficient separation and migration of photogenerated charge carriers while significantly suppressing electron-hole recombination.