基于纳米压印和热调控转印的高分辨率量子点发光二极管OA

Quantum dot light-emitting diodes(QLEDs),renowned for their high color purity,wide color gamut,and solution processability,are considered a pivotal technology for next-generation high-resolution displays.Howev-er,achieving high-resolution patterning without compromising the optical properties of quantum dots(QDs)remains a critical challenge hindering their practical application.Addressing this patterning bottleneck in high-resolution QLEDs fabrication,this work presents a novel patterning strategy based on nanoimprint lithography and thermally regulated transfer printing.The proposed method involves fabricating honeycomb microstructures on a polyvinyl buty-ral(PVB)surface using a silicon template,followed by selective filling of QDs controlled by solution wettability.Through a subsequent thermal-regulated transfer process,highly uniform QDs arrays with a feature size as small as 1.5 µm and a resolution of 9 072 pixels per inch(PPI)are successfully prepared.By employing higher-resolution templates,we have further achieved QDs array with a maximum pixel density of 25 400 PPI.Furthermore,we suc-cessfully fabricated high-resolution red QLEDs device(9 072 PPI)by integrating the QDs array onto hole trans-port layer(HTL),achieving a maximum external quantum efficiency(EQE)of 10.91%and a peak luminance of 164 421 cd/m².This work provides a stable and reproducible patterning pathway for the fabrication of high-resolution QLEDs.