基于乙二醇亚相Langmuir-Blodgett技术的高性能量子点发光二极管OA

This study introduces ethylene glycol(EG)as an alternative subphase to water in the Langmuir-Blodgett(LB)technique for fabricating high-quality quantum dot(QD)films,aiming to overcome the limitations of conven-tional aqueous-phase LB processes,such as QD degradation and increased device leakage current.By optimizing LB deposition parameters,a uniform and densely packed monolayer QD film was achieved and employed as the emitting layer in red QLEDs.The use of an EG subphase effectively prevents water-induced erosion of QDs,while the opti-mized LB film significantly suppresses leakage current.As a result,the device exhibits outstanding electrolumines-cence performance:red emission peaked at 630 nm with a narrow full width at half maximum of 22 nm,a maximum external quantum efficiency of 26.1%,and an operational lifetime(T95)of 3 272 h at an initial luminance of 1 000 cd·m-2,markedly surpassing both conventional aqueous-phase LB devices and spin-coated reference devices.These findings demonstrate that the EG subphase LB strategy,through the mitigation of interfacial defects and leakage pathways,offers a promising fabrication route toward high-efficiency and long-lifetime QLEDs.