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应用于反熔丝OTP的低功耗高速动态比较器OA

Low-power and high-speed dynamic comparator for anti-fuse OTP memory

中文摘要英文摘要

为满足反熔丝一次性可编程(One Time Programmable,OTP)存储器对低功耗、高速度和高精度读取电路的应用需求,设计了一种改进型 StrongARM 动态比较器.基于 MSADLC 结构进行了优化:移除尾电流源,并在输入差分对管上方引入 MOS 管,阻断电源到地的直通电流路径;在输入级引入时序控制机制以提高增益并加快比较速度;在输出节点引入缓冲电路增强比较精度.采用 SMIC 28 nm CMOS 工艺进行设计与流片验证,仿真结果表明,该比较器功耗为 36.26 μW,延时为 63 ps,失调电压为 3.66 mV,综合性能指标优于传统 StrongARM 与 MSADLC结构.测试结果表明,搭载该动态比较器的 OTP 读取时间提升 73.2%,功耗降低 64.2%,准确率提升 2.07%.

A high-speed,low-power improved StrongARM dynamic comparator was proposed to meet the requirements of anti-fuse One Time Programmable(OTP)memory for low-power,high-speed,and high-precision readout circuits.Based on the MSADLC architecture,the circuit was optimized by removing the tail current source and introducing a MOS transistor above the input differential pair to block the direct DC path from VDD to GND.A timing control mechanism was incorporated into the input stage to enhance gain and accelerate comparison speed.Additionally,a buffer circuit was integrated at the output node to enhance comparison precision.The design and tape-out verification were implemented using the SMIC 28 nm CMOS process.Simulation results demonstrate that the comparator achieves a power consumption of 36.26 μW,a delay of 63 ps,and an offset voltage of 3.66 mV,exhibiting superior performance compared to traditional StrongARM and MSADLC structures.Measurement results indicate that the OTP equipped with this dynamic comparator achieves a 73.2%reduction in read time,a 64.2%reduction in power consumption,and a 2.07%increase in read accuracy.

王梦涵;于慧;唐宁

沈阳工业大学 信息科学与工程学院,辽宁 沈阳 110870沈阳工业大学 信息科学与工程学院,辽宁 沈阳 110870电子科技大学 集成电路科学与工程学院(示范性微电子学院),四川 成都 611731

信息技术与安全科学

反熔丝OTPMSADLC低功耗高速

e-fuseOTPMSADLClow-powerhigh-speed

《电子元件与材料》 2026 (5)

526-532,7

辽宁省教育厅基本科研项目面上项目(LJ212410142068)

10.14106/j.cnki.1001-2028.2026.1410

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