基于OLS码的DRAM型存储器单粒子功能中断加固设计研究OA
Study on the Design of Single-Event Functional Interrupt Reinforcement for DRAM Memory Based on OLS Code
高能粒子会触发 DRAM 型存储器发生单位或多位错误,传统上使用片上纠错码或错误检测与纠正(EDAC)核来纠错检错,当存储器芯片发生单粒子功能中断(SEFI)时,该措施无法有效应对.面向嵌入式应用,提出了一种基于正交拉丁方码(OLS)保护 64 位数据字加固算法,并将该方法扩展到 32 位数据字保护,最后将设计的保护电路在 DDR3 SDRAM 存储器控制器上进行了应用验证.结果表明,在单个存储芯片发生 SEFI 时,提出的方法能够有效保护 32 位、64 位数据字,具有实现简单、占用逻辑资源少的特点.
Energetic particles can trigger single or multi-bit errors in DRAM memories,and the traditional use of on-chip error correction codes or error detection and correction(EDAC)cores for error correction and detection is not a measure that can effectively respond to a memory chip when a single event functional interrupt(SEFI)occurs.For embedded applications,a 64-bit data word reinforcement algorithm based on OLS code protection is proposed,and the method is extended to 32-bit data word protection,and finally the designed protection circuit is verified by applying on a DDR3 SDRAM memory controller.The results show that the proposed method can effectively protect 32-bit and 64-bit data words when SEFI occurs in a single memory chip,with simple implementation and less logic resources.
赵长啸;陈庭康;田毅;马世耀
中国民航大学安全科学与工程学院,天津 300300中国民航大学中欧航空工程师学院,天津 300300中国民航大学安全科学与工程学院,天津 300300中国民航大学中欧航空工程师学院,天津 300300
信息技术与安全科学
单粒子效应DRAM存储器OLS码
single event effectDRAMmemoryOLS code
《电子器件》 2026 (2)
260-265,6
国家重点研发计划课题项目(2021YFB1600601)天津市航空装备安全性与适航技术创新中心开放基金项目(JCZX-2022-KF-07)
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