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MLCC电-热应力击穿失效机制与可靠性提高技术OA

Failure Mechanisms of Electro-Thermal Stress Breakdown in MLCCs and Reliability Enhancement Techniques

中文摘要英文摘要

针对多层陶瓷电容器(MLCC)电-热应力击穿失效问题,系统分析其失效模式与机理,并阐述相应的分析技术,提出可靠性提升方案.综合运用电气性能测试、金相显微镜观察、加电筛选等技术手段,结合研磨解剖分析,精准定位内部隐性短路缺陷,揭示其分布特征.研究结果表明,电-热应力击穿失效主要表现为介质层离子迁移与氧空位富集导致的绝缘性能退化,特别是介质层厚度≤0.6 μm的超薄层型MLCC在过电压环境下的失效风险显著升高.通过优化核心制造环节、改进电路设计及引入柔性端电极结构等措施,可有效降低MLCC的失效率.应用案例验证表明,引入柔性端电极结构并优化PCB散热设计,可使常规型MLCC高温环境下的失效率从0.5%降至0.01%,产品可靠性得到显著提升.

Aiming at the electro-thermal stress breakdown failure of multilayer ceramic capacitors(MLCCs),the failure modes and mechanisms are systematically analyzed,the corresponding analysis techniques are elaborated,and the reliability enhancement schemes are proposed.Electrical performance testing,metallographic microscopy,power-on screening and other technical means are comprehensively adopted.Combined with grinding and cross-sectional analysis,internal latent short-circuit defects are accurately located and their distribution characteristics are revealed.The research results indicate that the electro-thermal stress breakdown failure is mainly manifested as insulation degradation caused by ion migration in dielectric layers and oxygen vacancy enrichment.In particular,the failure risk of ultra-thin-layer type MLCCs with dielectric layer thickness of≤0.6 μm increases significantly under overvoltage conditions.The failure rate of MLCCs can be effectively reduced by optimizing core manufacturing processes,improving circuit design,and adopting flexible terminal electrode structures.As verified by application cases,the introduction of flexible terminal electrode structures and the optimized PCB thermal design reduce the failure rate of conventional MLCCs in high-temperature environments from 0.5%to 0.01%,and product reliability is significantly improved.

王静;孙慧楠;易凤举

成都宏科电子科技有限公司,成都 610199成都宏科电子科技有限公司,成都 610199成都宏科电子科技有限公司,成都 610199

信息技术与安全科学

多层陶瓷电容器失效分析电-热应力击穿氧空位迁移可靠性提升

multilayer ceramic capacitorfailure analysiselectro-thermal stress breakdownoxygen vacancy migrationreliability enhancement

《电子与封装》 2026 (5)

70-74,5

10.16257/j.cnki.1681-1070.2026.0049

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