大电流厚膜混合半桥倍流整流变换器设计OA
Design of High-Current Thick-Film Hybrid Half-Bridge Current-Doubler Rectifier Converter
为满足新型装备中AI芯片、数字信号处理器(DSP)等对低压大电流供电的需求,针对传统两级式供电架构存在的效率低、体积大等问题,开展基于厚膜混合集成工艺的单级式半桥倍流整流变换器设计.通过分析厚膜工艺在大电流应用中存在的导体电流密度低、散热性能差及高频损耗高等问题,提出采用高导热活性金属钎焊陶瓷(AMB)基板与优化功率互连结构来提升通流能力与散热性能.电路采用LM5035C控制芯片实现前馈电压模式调制与同步整流驱动,变压器采用4∶1匝比并联结构以降低绕组损耗.研制出输入电压范围为20~38 V、输出电压为1V、输出电流为50A的试验样机,峰值效率超过90%,验证了所提结构在实现高功率密度、高效率及良好动态响应方面的可行性,为新型电子装备的低压大电流供电需求提供了可靠的集成解决方案.
To meet the demand for low-voltage high-current power supply in new equipment such as AI chips and digital signal processors(DSPs),and to address the issues of low efficiency and large volume in traditional two-stage power supply architectures,a single-stage half-bridge current-doubler rectifier converter based on thick-film hybrid integration technology is designed.By analyzing the problems of low conductor current density,poor heat dissipation capacity and high high-frequency losses in thick film processes in high-current applications,it is proposed to adopt high thermal conductivity active metal brazed(AMB)ceramic substrates and an optimized power interconnection structure to enhance the current-carrying capacity and heat dissipation performance.The circuit employs the LM5035C control chip to achieve feedforward voltage-mode modulation and synchronous rectification drive,while the transformer is designed with a 4∶1 turn ratio parallel structure to reduce winding losses.A test prototype with an input voltage range of 20-38 V,an output voltage of 1 V,and an output current of 50 A is developed.The peak efficiency of this prototype exceeds 90%,verifying the feasibility of the proposed structure in achieving high power density,high efficiency,and good dynamic response,and providing a reliable integrated power solution for low-voltage high-current applications in new electronic equipment.
解光庆;李昕煜
中国电子科技集团公司第四十三研究所,合肥 230088中国电子科技集团公司第四十三研究所,合肥 230088
信息技术与安全科学
半桥倍流整流变换器厚膜混合集成电路低压大电流AMB基板同步整流互连工艺
half-bridge current-doubler rectifier converterthick-film hybrid integrated circuitlow-voltage high-currentAMB substratesynchronous rectificationinterconnection process
《电子与封装》 2026 (5)
52-57,6
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